Beom Jin Kim, Pil Hong Jeong, Jae Min Lee, Dong Hwan Won, Jeong Ho Lee, Heon Min Lee, Ku Yun Jeong, Keon Park, Kawan Anil, Soon Jae Yu, Yeon Sik Chae, Sung Bae Park
J Korean Inst Electr Electron Mater Eng 2025;38(3):272-277. Published online May 1, 2025
SMD-type 660 nm wavelength semiconductor laser diode device is fabricated using silicon resin molding technology and fabricated a BT resin printed circuit board. BT resin electrode structure printed circuit boards with soldering electrode pads and through holes for heat dissipation were fabricated. The SMD process is an injection molding technique in which the chip is molded from silicon material and then cut by a dicing process to complete the beam emission surface. The fabricated SMD-type semiconductor laser diode exhibits a good near-field beam pattern with no scattering/dispersion caused by the printed circuit board or silicon molding in the emitted laser beam, or reflections around the chip. It was also confirmed that the heat generated at 20 mA operation has good heat dissipation characteristics through the through-hole heat dissipation structure.
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