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"CST"

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"CST"

Epitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers
Gi-Sub LEE, Chi-Kwon Park, Won-Jae Lee, Byoung-Chul Shin, Shigehiro Nishino
J Korean Inst Electr Electron Mater Eng 2007;20(12):1056-1061.   Published online December 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.12.1056
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4H-SiC (0001）Epilayer Growth and Electrical Property of Schottky Diode
Shigehiro Nishino
J Korean Inst Electr Electron Mater Eng 2006;19(4):344-349.   Published online April 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.4.344

Citations

Citations to this article as recorded by  
  • Electrical characteristics of polycrystalline 3C-SiC thin film diodes
    Gwiy-Sang Chung, Jeong-Hak Ahn
    Journal of Sensor Science and Technology.2007; 16(4): 259.     CrossRef
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  • 1 Crossref
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