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CST 승화법을 이용한 p-type 4H-SiC(0001) 에피텍셜층 성장과 이를 이용한 MESFET 소자의 전기적 특성

이기섭, 박치권, 이원재, 신병철, Shigehiro Nishino

Epitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers

Gi-Sub LEE, Chi-Kwon Park, Won-Jae Lee, Byoung-Chul Shin, Shigehiro Nishino
J Electr Electron Mater 2007;20(12):1056-1061.
Published online: December 1, 2007
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Epitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers
J Electr Electron Mater. 2007;20(12):1056-1061.   Published online December 1, 2007
Download Citation

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Epitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers
J Electr Electron Mater. 2007;20(12):1056-1061.   Published online December 1, 2007
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