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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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"CdSe"

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"CdSe"

Nano and Oxide Electronics : The Synthesis and Optical Properties of Silica Coated CdSe/ZnS QDs
Ji Hye Lee, Hyun Ho Shin, Jong Heun Lee, Sang Il Hyun, Eun Hae Koo
J Electr Electron Mater 2013;26(3):221-226.   Published online March 1, 2013
The water soluble quantum dots (QDs) are synthesized by the phase transfer and silica coating reaction. The photoluminescence intensity of silica-coated QDs are mainly affected by the amount of phase transfer agent, SDS (sodium dodecyl sulfate), and the maximum value is obtained at the cmc (critical micell concentration) concentration of SDS in the phase transfer reaction. Based on fluorescence spectra and field emission transmission electron microscope (FETEM), the energy transfer rate by forster resonance energy transfer (FRET) is increasing with the thickness of the silica shell coated on CdSe/ZnS QDs.
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Nano Materials and Devices : The Synthesis and Characterization of Mesoporous Microbead Incorporated with CdSe/ZnS QDs
Eun Hae Koo, Ji Hye Lee, Sang Il Hyun, Jong Huen Lee
J Electr Electron Mater 2012;25(8):657-663.   Published online August 1, 2012
The spherical mesoporous silica is synthesized and incorporated with CdSe/ZnS quantum dots(QDs) for preparing micro beads to detect toxic and bio-materials with high sensitivity. The spherical silica beads with the brunauer-emmett-telle(BET) average pore size of 15 nm were prepared with a ratio 1, 3, 5-trimethylbenzen, as a swelling agent, to the block-copolymer template surfactant of over 1 and under vigorous mixing condition. The surface of spherical mesoporous silica is modified using octadecylsilane for incorporating QDs. Based on photoluminescence(PL) spectra, the relative brightness of mesoporous silica beads incorporated with 10 nM of QDs is 79,000 times brighter than that of Rodamine 6 G.
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The Structural and Electrical Properties of CdSe Films Deposited at Low Temperature
Ki Cheol Park, Tae Young Ma
J Electr Electron Mater 2010;23(10):776-781.   Published online October 1, 2010
CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were 200℃, 0℃ and -40℃. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ~1.72 eV regardless of substrate temperature. The resistivity of the films decreased to 0.5 Ωcm by lowering the substrate temperature to -40℃. The CdSe/glass films prepared at 0℃ showed the highest photosensitivity among the films in this study.
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