In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 μm for the fabrication of power silicon devices.

For the investigation of dopant profiles in implanted Si_1-xGe_x, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in Si_1-xGe_x are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of R_p and 1.8% deviations of ΔR_p owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of R_p and 8.1% deviations of ΔR_p in the arsenic implanted Si_0.2Ge_0.8 layer and 8.5% deviations of R_p and 38% deviations of ΔR_p in the Si_0.5Ge_0.5 layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the Si_1-xGe_x layer becomes more important for accurate device scaling and fabrication technologies.

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, BF2 and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with C++ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

For the formation of N+ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a SiO2/Si is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert N2gas and dry oxidation.

New material design has obtained tremendous attention in material science community as the performance of new materials, especially in nano length scale, could be greatly improved to applied in modern industry. In certain conditions limiting experimental synthesis of these new materials, new approach by computer simulation has been proposed to be applied, being able to save time and cost. Recent development of computer systems with high speed, large memory, and parallel algorithms enables to analyze individual atoms using first principle calculation to predict quantum phenomena. Beyond the quantum level calculations, mesoscopic scale and continuum limit can be addressed either individually or together as a multi-scale approach. In this article, we introduced current endeavors on material design using analytical theory and computer simulations in multi-length scales and on multi-physical properties. Some of the physical phenomena was shown to be interconnected via a cross-link rule called ``cross-property relation``. It is suggested that the computer simulation approach by multi-physics analysis can be efficiently applied to design new materials for multi-functional characteristics.

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk,Si3N4/Si, and Al/Si samples are used and observed the shapes milled from different sputtering rates,incident angles of Ga+ ions bombardment, beam current, and target material. These conditions also can beinfluenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions ofFIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damagedlayers caused by bombarding of Ga+ ions were observed on the surface of target materials. The simulatedresults were shown a little bit deviation with the experimental data due to relatively small sputtering rateon the sample surface. The simulation results showed about 10.6% tolerance from the measured data at200 pA. On the other hand, the improved analytical model of damaged layer was matched well withexperimental XTEM (cross-sectional transmission electron microscopy) data.

For conventional electrical actuators, the materials are mainly made up of metals, which mean they are prone to corrosion and electrical sparking. Replacing these systems with polymer metal composite based materials can be solved both problems. Considering their excellent clcctromechanical property, low device fabricatioI1 cost, light weight, and go electrical conductivity, the actuator based on ionic polymer metal composite (IPMC) was fabricated using Nafion film, NaOH 0. l molar solution, and Au electrode. IPMCs exhibit good electrostatic property which means they can in principle be used in making actuators based on electromechanical motions. The resistance measurements or Nafion film after soaking in NaOH and deionized water were demonstrated and compared each other. The result of samPle soaked in NaOH showed better ejcal conductivity thall in deionized water. The fabricate匕1 IPMC actuator exhibits a l large deformation of bending dusplacement of approximately 9 mm with applied low AC voltage 6.89 V at 2. 84 Hz. The result of computer simulation was also very similar and shown as a bending displacement of 8. 6085 mm.