This study investigates the effect of mask material and thickness on the silicon etching profile using a high-density plasma (HDP) etching system, aiming to reduce optical loss in silicon-based optical waveguides. As the mask thickness increased, the etching sidewall angle became steeper. An etching profile angle of 87° was obtained when tetraethyl orthosilicate (TEOS) was used as the mask material, while 80° was obtained for photoresist (PR). This is attributed to electron charging on the mask surface in the plasma. The charged mask modifies the distribution and strength of the electric field depending on its thickness, thereby affecting the trajectory of positive ions accelerated toward the substrate by the bias voltage. Furthermore, Plasma diagnostics using optical emission spectroscopy (OES) and surface composition analysis using field emission Auger electron spectroscopy (FE-AES) revealed that changes in the mask material also alter the reaction pathways and formation characteristics of active species and silicon by-products in the plasma. These results suggest that the mask material influences the overall plasma characteristics, including electron density and ion energy, and plays a critical role in the precise control of silicon etching profiles for high-performance optical device fabrication.

In this study, Pb(Ni_1/3Nb_2/3)O₃-Pb(Zr,Ti)O₃ ceramics substituted with Pb(Mg_1/2W_1/2)O₃ were fabricated with the variation of CuO for application to ultrasonic cleaning of removable orthodontic appliances (ROA). And their piezoelectric and dielectric properties were investigated. At the 0.12 wt% CuO added ceramics sintered at 930℃, the excellent values of dielectric constant=2,519, density=7.82 g/㎤, kp=0.64, d₃₃=536 pC/N, Qm=57 were obtained, respectively. These values were suitable for application to ultrasonic cleaning of ROA.

As the operating environment in semiconductor processes becomes demanding, research is being conducted to manufacture dense alumina substrates without defects after sintering to ensure high durability of electrostatic chucks, which are critical components in semiconductor equipment. Therefore, in this study, in order to manufacture green sheets with a high filling ratio for implementing a high-density substrate, alumina powders with average particle sizes of 2.07 μm (L) and 0.37 μm (S) were mixed in ratios of 9:1, 8:2, 7:3, and 6:4, respectively, and green sheets were manufactured and the filling ratio and sintering behavior were observed. Green sheets were fabricated by preparing a slurry using organic materials in Al₂O₃ powders of different particle sizes. The packing density of the green sheet mixed with L and S alumina powders with different average particle sizes in a ratio of 7:3 before and after binder burn-out showed the highest values of 3.19 g/cm³ and 2.87 g/cm³, respectively. As a result of observing the sintered density based on the mixing ratio of alumina powders revealed that the alumina sheet mixed at a 6:4 ratio of L and S powders, sintered at 1,700℃, exhibited the best sintering characteristics with a density of 3.96 g/cm³.

We investigated the potential of IO:H thin films and hydrogen doping to improve current density and fill factor for enhancing the performance of silicon heterojunction solar cells. We revealed that a transmittance of 86.7% and work function of 5.4 eV could be achieved by injecting 3 sccm of hydrogen gas. The lattice constant of 1.037 nm at the AB site indicates an anion antibonding tendency, and the work function increases as the Fermi level shifts to the valence band. Based on these findings, we fabricated a silicon heterojunction solar cell and achieved an efficiency of 18.53%, while computer simulation confirmed a conversion efficiency of 24.65%, an open-circuit voltage of 724 mV, and a fill factor of 82.72% at a current density of 41.15 mA/㎠.

Titanium dioxide (TiO₂) holds significant scientific and technological relevance as a key photocatalyst and resistive random-access memory, demonstrating unique physicochemical properties and serving as an n-type semiconductor. Understanding the density and arrangement of oxygen vacancies (VOs) is crucial for tailoring TiO₂’s properties to diverse technological needs, driving increased interest in exploring oxygen vacancy complexes and superstructures. In this mini review, we summarize the recent understandings of the fundamental properties of oxygen vacancies in bulk rutile (R-TiO₂) and anatase (A-TiO₂) based on DFT and beyond method. We specifically focus on the excess electrons and their spatial arrangement of disordered single VO in bulk R and A-TiO₂, aligned with the experimental findings. We also highlight the theoretical works on investigating the geometries and stabilities of ordered VOs complexes in bulk TiO₂. This comprehensive review provides insights into the fundamental properties of excess electrons in reduced TiO₂, offering valuable perspectives for future research and technological advancements in TiO₂-based devices.

Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

The purpose of this paper is to help those who research and develop solar cells in university laboratories and industrial sites understand the most basic and important quantum efficiency measurement and analysis method in analyzing solar cell performance. Starting with the definition of quantum efficiency, we calculate the theoretical current density according to the band gap of the solar cell material from the solar spectrum, along with a detailed introduction to the measurement and analysis methods, and measure and analyze the theoretical current density and quantum efficiency. We discuss in depth how to analyze the performance of solar cells through Quantum efficiency measurement and analysis of solar cells is a very useful method that can give intuition to solar cell performance analysis as it can analyze solar cells according to depth (front emitter, bulk, rear surface). Students and researchers who study solar cells with a deep understanding of theoretical current density and quantum efficiency measurement analysis are expected to use it as a basis for analyzing solar cell performance.

For machine learning techniques, a large amount of high-quality material property data should be accumulated. In this study, several data for an alumina tape casting process were produced with the variables of slurry viscosity, gap size, and coating speed. The alumina tapes were manufactured in the range of 1,000~6,000 cps for slurry viscosity, 300~1,000 ㎛ for gap size, and 0.5~2.0 m/min for coating speed. As a result, the lower the viscosity, coating speed, and gap size, the more pore-free tapes could be manufactured. The viscosity of the slurry limited the minimum thickness of the tape. Green sheets with high packing density were manufactured from the slurry of 100~6,000 cps slurry viscosity, coating speed of 0.5 m/min, and a 300~500 ㎛ gap size.

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of 1.89×107 and the lowest trap density of 4.829×1,022 cm^-2 were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

There is growing interest in power inductors in which metal soft magnetic powder and epoxy resin are combined. In this field, the process technology for increasing the packing density of magnetic particles in an injection molding process is very important. However, little research has been reported in this regard. In order to improve the packing density, we investigated and compared the sedimentation heights of pastes for three types of soft magnetic alloy powders as a function of the mixing ratios and the type of resin used. Experimental results showed that the packing density was the highest (71.74%) when the mixing ratio was 80：16：4 (Sendust：Fe-Si：CIP) according to the particle size using an SE-4125 resin. In addition, the packing density was found to be inversely related to the layer separation distance. As a result, it was confirmed that the dispersion of solid particles in the paste was important for curing; however, the duration of the curing process can greatly affect the packing density of the final composite.

In this work, LiMn2O4 and LiNi1/3Mn1/3Co1/3O2 cathode materials are mixed by some specific ratios to enhance the practical capacity, energy density and cycle performance of battery. At present, the most used cathode material in lithium ion batteries for EVs is spinel structure-type LiMn2O4. LiMn2O4 has advantages of high average voltage, excellent safety, environmental friendliness, and low cost. However, due to the low rechargeable capacity (120 mAh/g), it can not meet the requirement of high energy density for the EVs, resulting in limiting its development. The battery of LiMn2O4-LiNi1/3Mn1/3Co1/3O2 (50:50 wt%) mixed cathode delivers a energy density of 483.5 mWh/g at a current rate of 1.0 C. The accumulated capacity from 1st to 150th cycles was 18.1 Ah/g when the battery is cycled at a current rate of 1.0 C in voltage range of 3.2~4.3 V.

It is necessary for ferrite sheets to be fabricated with high packing density for excellent electrical properties and high strength. In this study, the relationship between the warpage and the packing density of ferrite green sheet, was investigated with amount variation of organic additives. With 0.4 wt% of dispersant, the packing density was about 48% and warpage appeared 0.5~1.3 ㎜ high. With 1.4 wt% of dispersant, the packing density increased up to 57% and warpage appeared 0.8~2.1 ㎜ high. With high packing density, warpage appeared along the edges of specimen, while with low packing density, deformation appeared over whole specimen inhomogeneously. It is thought that inhomogeneous deformation after sintering came from the inhomogeneity in green sheet prepared with badly dispersed slurry. With good homogeneity in green sheet from well-dispersed slurry, isotropic shrinkage is thought to have occurred along the distance from center to edges of specimen during sintering.

Hybrid supercapacitors with high power density and long cycle life are widely used for emergency power source of LED emergency luminaires. In this paper, we designed and fabricated a hybrid capacitor cell and a module for the LED emergency luminaires. Using hybrid supercapacitor cells (1,000 F, 2.8 V), we designed a module in a 10-year warranty considering aging and ESR. Considering the ESR and efficiency has been designed to module with 1,000 F 5.6 V design results in 2 series and 2 parallel combination. Module was used to confirm that the operation 77.5 minutes at room temperature, discharge LED emergency luminaires with 2 W. As a LED emergency luminaires of emergency power supply that we can support more than 10 years of life was confirmed the applicability of hybrid supercapacitor.

We have investigated the effect of electrical properties of amorphous InGaZnO thin filmtransistors (a-IGZO TFTs) by post thermal annealing in O2 ambient.The post-annealed in O2 ambienta-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has betterperformance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well asreasonable threshold voltage, than others do. The interface trap density is controlled to achieve theoptimum value of TFT transfer and output characteristics. The device performance is significantlyaffected by adjusting the annealing condition. This effect is closely related with the modulation annealingmethod by reducing the localized trapping carriers and defect centers at the interface or in the channellayer.

Cs3Sb photocathode was formed by newly developed process and successive in-situ lightingdevices were fabricated in a process chamber. R, G, and B phosphors were applied on the anode plate,respectively. Major parameters such as brightness, power consumption, and efficacy were measured. Thewavelength of LED excitation source was 450 nm. Both high power and low power modes were appliedin the measurement. Measurement values were clearly differentiated by the voltage application modes. The measured values of each parameter was good enough to be applied for general lighting source. Theresults showed that Cs3Sb photocathode formed in atmospheric conditions was functioning as good as thephotocathode formed in UHV conditions, and thus it could be applied to advanced lighting devices.

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was 3.1×1010n/cm2. The current density after irradiation decreased from 12.7 to 0.75 A/cm2. Also, a slight positive shift (ΔVth= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (ΔΦB= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

The Sr based ceramic thin films were deposited on Si substrate by RF magnetron sputtering method. And Sr based thin films were annealed at 500～700℃ using RTA. The surface roughness showed about 2.4 nm in annealed thin film at 600℃. The capacitance density of Sr based thin films were increased with the increase of annealing temperature. The maximum capacitance density of 0.6 ㎌/㎠ was obtained by annealing temperature at 700℃. The voltage dependence of dielectric loss showed about 0.02 in voltage ranges of -10～＋10 V. The leakage current density of annealing temperature of 600℃ was the 4.0×10-6 A/㎠ at applied voltage of -5～＋5 V.

The epoxy/micro-and nano-mixed silica composites (EMNC) systems were prepared and the AC insulation breakdown strength was evaluated. Glass transition temperature (Tg) and crosslink density were also measured by dynamic mechanical analyzer (DMA) in order to correlate them with the electrical and mechanical properties, and the effect of silane coupling agent on the electrical properties was also studied. Electrical properties and crosslink density of epoxy/micro-silica composite were noticeably improved by addition of nano-silica and silane coupling agent, and the highest breakdown strength was obtained by addition of 0.5～5phr of nano-silica and 2.5phr of silane coupling agent, and the highest tensile and flexural strength were obtained by addition of 2.5phr of nano-silica.

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-SnO2 films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-SnO2 films. To study the post-annealing effects on the properties of TTFT, ZnO-SnO2 films were annealed at 200℃ or 400℃ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-SnO2 films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm Si3N4 film grown on 100 nm SiO2 film was used as gate dielectrics. The mobility, Ion/Ioff, interface state density etc. were obtained from the transfer characteristics of ZnO-SnO2 TTFTs.

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density (Dit) and grain boundary trap density (Ntrap) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage (Vth) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated SiO2 insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV∼6 kV to measure the conduction current for the analysis of ion current.