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"Dielectric Constant"

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"Dielectric Constant"

The Research Trends of Dielectric Materials for MLCC Applications
Intae Seo, Ho-yeon Kim, Hyoung-won Kang, Cheol-min Oh, Seung-ho Han, Hyungsuk Kim
J Electr Electron Mater 2025;38(2):132-142.   Published online March 1, 2025
DOI: https://doi.org/10.4313/JKEM.2025.38.2.2
This review addresses the development trends of dielectric ceramics, the key material for Multilayer Ceramic Capacitors (MLCCs), which are essential components in high-performance electronic devices. Traditional MLCCs have employed BaTiO3 (BT)-based dielectrics to achieve high dielectric constant and low resistance. By minimizing oxygen vacancies and suppressing grain growth in BT materials, the temperature and voltage stability of MLCCs have been improved, leading to the development of MLCCs with diverse properties. However, the maximum dielectric constant of approximately 3000 in BT materials poses a limitation in overcoming the trade-off between rated voltage and capacitance density. Therefore, ultra-high permittivity dielectric materials have gained attention to meet the requirements of ultra-high-performance MLCCs, and ongoing research focuses on enhancing the temperature and frequency stability of these materials. This review analyzes the characteristics and limitations of conventional BT materials and explores recent research trends and future potential in developing new MLCCs based on ultra-high dielectric constant materials.
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Microwave Dielectric Properties of Ultra-Low Temperature Co-firable Ba3V4O13-BaV2O6 Ceramics
Sang-ok Yoon, Seoyoung Hong, Hyung-hwan Cho, Shin Kim
J Electr Electron Mater 2021;34(5):342-347.   Published online September 1, 2021
DOI: https://doi.org/10.4313/JKEM.2021.34.5.11
Phase evolution, sintering behavior, microstructure, and microwave dielectric properties of (1-x) mol Ba3V4O13 - (x) mol BaV2O6 system were investigated. The sintered specimens of all compositions consisted of Ba3V4O13 and BaV2O6, and no secondary phase was observed. As x increased, the linear shrinkage decreased to the composition of x=0.5, and then increased again, implying that Ba3V4O13 and BaV2O6 phases interfered mutually with each other during sintering. All compositions showed a dense microstructure with a large grain growth. Cracks were observed in some compositions because of the relatively high sintering temperature of 620~640℃. As x increased, the dielectric constant increased, while the quality factor was maintained from about 50,000 GHz to about 70,000 GHz up to the composition of x=0.9, and then decreased to 20,987~27,180 GHz at the composition of x=1.0. As x increased, the temperature coefficient of the resonance frequency showed a (+) value from a (-) value. The dielectric constant, the quality factor, and the temperature coefficient of resonant frequency of x=0.7 composition sintered at 640℃ for 4 hours were 10.61, 71,126 GHz, and -4.9 ppm/℃, respectively. This composition showed a good chemical compatibility with Al powder, indicating that the Ba3V4O13-BaV2O6 ceramics are a candidate material for ULTCC (Ultra-Low Temperature Co-fired Ceramics) applications.
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Synthesis and Characterization of BaTiO3 Powder by Solid State Method
Yong Jin Kim, Moon Hee Choi, Hyo Soon Shin, Byeong-kwon Ju, Myoung Pyo Chun
J Electr Electron Mater 2020;33(6):483-489.   Published online November 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.6.10
BaTiO3 powder was synthesized by a solid-state reaction using BaCO3 and TiO2. Different calcination temperatures (800℃, 850℃, 900℃, and 950℃) were set to investigate their effects on the properties of BaTiO3 powder. The synthesized BaTiO3 phase was confirmed to be a single phase by XRD, and the tetragonality (c/a) and crystallite size were calculated. Thereafter, each calcinated BaTiO3 was sintered at five different sintering temperatures (1,100℃, 1,150℃, 1,200℃, 1,250℃, and 1,300℃), and the tetragonality, density, porosity, dielectric constant, and grain size were measured. As the calcination temperature increased, the tetragonality and crystallite size also increased, to 1.008 and 66 nm, respectively, at 950℃. Moreover, most pellets showed increased density, dielectric constant, and tetragonality as the sintering temperature increased up to 1,250℃; the same parameters slightly decreased at 1,300℃. It is noteworthy that the tetragonality of BaTiO3 at 1,250℃ exhibits a very high c/a value of 1.0084. In addition, the grain size and dielectric constant measured near the Curie temperature increased as the sintering temperature increased.
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Microwave Dielectric Properties of Y2O3 and TiO2-Doped Ba(Mg0.5W0.5)O3 Ceramics
Chang-bae Hong, Shin Kim, Sun-ho Kwon, Sang-ok Yoon
J Electr Electron Mater 2018;31(4):212-215.   Published online May 1, 2018
The phase evolution, microstructure, and microwave dielectric properties of Ba(Mg0.5-2xY2xW0.5-xTix)O3 (x= 0.005~0.05) ceramics sintered at 1,700℃ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from -19.6 ppm/℃ to -5.9 ppm/℃ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of Ba(Mg0.40Y0.10W0.45Ti0.05)O3 were 21.7, 132,685 GHz, and -5.9 ppm/℃, respectively.
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Thermal and Dielectric Properties of LiF-Doped MgO Ceramics
Shin Kim, So Jung Kim, Kyung Jin Nam, Hansol Cha, Sang Ok Yoon
J Electr Electron Mater 2015;28(7):419-423.   Published online July 1, 2015
Sintering, microstructure, thermal conductivity and microwave dielectric properties of xLiF-(1-x)MgO ceramics (x=0.03-0.10 mol) were investigated. The high density was obtained in the specimens of x≥0.06, i.e., 0.04 LiF-0.96 MgO in mol, whereas the amount of 0.03 mol LiF was insufficient to densify. From the result that the contact flattening in the sintered specimen was observed, the densification occurred through the liquid-phase sintering. The specimen of x=0.06 showed the highest room-temperature thermal conductivity. Relative density, thermal conductivity, dielectric constant, and quality factor (Q x f) of the specimen for x=0.06 sintered at 900°C for 4 h were 97.8%, 39.2 Wm-1K-1, 9.45, and 14,671 GHz, respectively.
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Sintering and Microwave Dielectric Properties of Zn2-2xSi1+xO4 Ceramics
Sang Ok Yoon, Yun Han Kim, So Jung Kim, So Ra Jo, Shin Kim
J Electr Electron Mater 2015;28(7):428-432.   Published online July 1, 2015
Sintering and microwave dielectric properties of Zn2-2xSil+xO4 (x=O-0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=O whereas SiO2 was detected in that for x=0.05. The composition of Zn2SiO4 might be close to x=0.02, i.e., Zn1.96Si1.02O4; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=O. For the specimens of x≥0.05 , the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor (Q×f) of the specimen for x=0.05, i.e., Znl.9Si1.05O4, sintered at 1,400℃ were 96.5%, 6.43, and 115,166 GHz, respectively.
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Piezoelectric Properties of 0.94(Na0.5K0.5)NbO3-0.06(Sr0.5Ca0.5)Tio3 with 0.1 Mno2 Addition at Varying Sintering Temperatures
Hye Rin Jung, Sung Gap Lee, Tae Ho Lee, Min Ho Kim, Ye Won Jo
J Electr Electron Mater 2014;27(1):14-17.   Published online January 1, 2014
In this study, lead-free Piezoelectric (Na0.47K0.47Sr0.03Ca0.03)(Nb0.94Ti0.06)O3-0.1 MnO2 ceramics werefabricated using mixed oxide method and the effects of various sintering temperature on the structural andelectrical properties were investigated. For the (Na0.47K0.47Sr0.03Ca0.03)(Nb0.94Ti0.06)O3-0.1 MnO2 (NKN-SCT-MnO2)ceramics sintered at temperatures of 1,025∼1,100℃. The results indicated that all specimens were perovskitesingle phase formation without any second phase. It has been shown that relative density is increased toincreasing sintering temperature. When the sintered temperature at 1,075℃, highest sintered density andmaximum value of 4.45 g/cm3. Average grain size is increased to increasing sintering temperature. Theelectromechanical coupling factor, dielectric constant, dielectric loss, d33 and curie temperature at the sinteringtemperature 1,075℃ of NKN-SCT-MnO2 specimens were 0.22, 511, 0.033, 103 and 380℃, respectively.
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Dielectric Characteristics of Polytetrafluoroethylene-based Composites for Microwave Substrates with Formation Pressure
Hong Je Choi, Myung Pyo Chun, Yong Soo Cho, Hak Rae Cho
J Electr Electron Mater 2013;26(6):429-433.   Published online June 1, 2013
PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.
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Technology Education : Effects of RTA on the Properties of SBNO Thin Film
Jin Sa Kim
J Electr Electron Mater 2012;25(11):926-929.   Published online November 1, 2012
The Sr0.7Bi2.3Nb2O9(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at 300℃ of substrate temperature. And the SBNO thin films were annealed at 650~800℃ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above 750℃. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.
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Structural and Electrical Properties of (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 Ceramics with Variation of Sintering Temperature
Tae Ho Lee, Jin Ho Yeo, Sung Gap Lee
J Electr Electron Mater 2012;25(7):506-510.   Published online July 1, 2012
In this study, lead-free (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 ceramics were fabricated by conventional mixed oxide method. Structural and electrical properties of lead-free (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 ceramics with the variation of sintering temperature were investigated. As results of x-ray diffraction analysis, all specimens showed a typical polycrystalline perovskite structure without presence of the second phase. Sintered density increased with an increases of sintering temperature and the specimen sintered at 1,020℃ showed the maximum value of 4.5 g/cm3. The average grain size of the (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 specimen sintered at 1,020℃ is about 0.83 μm. Electromechanical coupling factor, relative dielectric constant and dielectric loss of (Na0.465K0.465Bi0.07)(Nb0.93Ti0.07)O3-0.08MnO2 specimens sintered at 1,020℃ were 0.252, 741 and 0.043% respectively.
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Dielectric and Mechanical Properties of BNT-LCP Composites
Myoung Sung Park, Jeong Ho Cho, Byung Ik Kim, Myoung Pyo Chun, Sahn Nahm
J Electr Electron Mater 2011;24(7):547-553.   Published online July 1, 2011
We investigated the dielectric and mechanical properties of ceramic polymer composite xBNT - (1-x)LCP (x= 0, 10, 20, 30, 40 vol.%). The disk shaped BNT (BaNd2Ti4O12) - LCP (liquid crystal polymer) composite samples were prepared by compression molding method. With increasing the BNT content in composites from 10 to 40 vol.%, the dielectric constant increased but the dielectric loss as well as bending strength of composites reduced. These composites were well described with modified Lichtenecker`s model having k = 0.392 and 0.303 for the first and second ball milled BNT filled composites, which means that the BNT filler in composites are well dispersed. The dielectric constant of the composite comprised of the second milled BNT (D50 = 1.39 um) was higher that of the composite of the first milled BNT (D50= 2.45 um), which seems to be related with the different particle size and dispersion of BNT fillers in LCP matrix. The bending strength of the composite containing the second milled BNT was superior to that of the composite of the first milled BNT.
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Poling Effect on Piezoeletric Ceramics for Air Medium
Yong Hyuk Kim
J Electr Electron Mater 2010;23(6):464-470.   Published online June 1, 2010
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The Electrical Properties of Mutilayer Chip Capacitor with X7R by Addition of Rare-Earth Lons (Y2O3, Er2O3) using Design of Experiments
Jung Rag Yoon, Hwan Woon, Heun Young Lee
J Electr Electron Mater 2010;23(3):216-221.   Published online March 1, 2010
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A Study of Optical Characteristics Correlated With Low Dielectric Constant of SiOCH Thin Films Through Ellipsometry
Yong Heon Park
J Electr Electron Mater 2010;23(3):228-233.   Published online March 1, 2010
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Dielectric and Piezoelectric Characteristics of 0.95(K0.5Na0.5)NbO3-0.05Li(Sb0.8Nb0.2)O3 Pb-free Ceramics with amount of Ag2O Addition
Do Hyung Kim, Ju Hyun Yoo, Yeong Ho Jeong
J Electr Electron Mater 2009;22(11):925-929.   Published online November 1, 2009
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The Study on Opto-electric Properties in EL Device with PMN Dielectric Layer
Jeong Hun Kum, Da Sol Han, Sung Il Ahn, Seong Eui Lee
J Electr Electron Mater 2009;22(9):776-780.   Published online September 1, 2009
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Effect of Ceramic Powder Content and Shape on the Electrical Properties of Ceramic(BaTiO3)-polymer(Epoxy) Composite for Embedded Capacitors
Jeong Woo Han, Jung Rag Yoon, Hae June Je, Dong Ho Lee, Kyung Min Lee
J Electr Electron Mater 2009;22(6):495-500.   Published online June 1, 2009
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Piezoelectric and Dielectric Properties of NaNbO3-LiNbO3 Ceramics according to BaTiO3 Substitution
Sang Ho Lee, Ju Hyun Yoo, Suk Bum Mah, Seong Goo Kim
J Electr Electron Mater 2009;22(3):205-209.   Published online March 1, 2009
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A Study of the Dielectric Characteristics of the Low-k SiOCH Thin Films by Ellipsometry
In Hwan Yi, Chang Su Hwang, Hong Bae Kim
J Electr Electron Mater 2008;21(12):1083-1089.   Published online December 1, 2008
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A Dielectric Constant Measurement Method of Unprepared Samples
Won Hui Lee
J Electr Electron Mater 2008;21(10):896-900.   Published online October 1, 2008
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Dielectric Characteristics on Filler Content and Sintering Temperature in Pb-Free White Dielectric Layer
Yong Tae An, Byung Hyun Choi, Mi Jung Ji, Jung Min Lee, Hyun Sun Kim, Kyung Won Jung
J Electr Electron Mater 2008;21(8):755-759.   Published online August 1, 2008
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Thermal, Dielectric Properties Characteristics of Epoxy-nanocomposites for Organoclay of Several Types
Jae Jun Park
J Electr Electron Mater 2008;21(6):538-543.   Published online June 1, 2008
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The Electrical Properties of High Voltage Mutilayer Chip Capacitor with X7R by addition of Er2O3 and Glass Frit
Jung Rag Yoon, Min Kee Kim, Tae Seog Chung, Byoung Chul Woo, Seog Won Lee
J Electr Electron Mater 2008;21(5):440-446.   Published online May 1, 2008
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Sintering and Dielectric Properties in Cordierite/Glass Composite for LTCC Application
Il Sun Hwang, Dong Hun Yeo, Hyo Soon Shin, Jong Hee Kim
J Electr Electron Mater 2008;21(2):144-150.   Published online February 1, 2008
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Sinterability and Microwave Dielectric Properties of xZnWO4-(1-x)TiO2 Ceramics Sintered at Low Temperature
J Electr Electron Mater 2006;19(9):855-861.   Published online September 1, 2006
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Microwave Dielectric Properties of Ca(Li(1/4)Nb(3/4))O3-CaTiO3 Ceramics added with Zinc-borosilicate Glass Frit
J Electr Electron Mater 2006;19(6):524-530.   Published online June 1, 2006
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A Study on the Characteristics of Dual-band Plastic Chip Antenna for Mobile Terminal using the Foamex Materials
J Electr Electron Mater 2005;18(2):130-135.   Published online February 1, 2005
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