This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and 0.249 Ω·cm2. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.

Electrostatic discharge has been considered as a major reliability problem in the semiconductorindustry. ESD reliability is an important issue for these products. Therefore, each I/O (Input/Output) PADmust be designed with a protection circuitry that creates a low impedance discharge path for ESDcurrent. This paper presents a novel Lateral Insulated Gate Bipolar (LIGBT)-based ESD protection circuitwith latch-up immunity and high robustness. The proposed circuit is fabricated by using 0.18 um BCD(bipolar-CMOS-DMOS) process. Also, TLP (transmission line pulse) I-V characteristic of proposed circuitis measured. In the result, the proposed ESD protection circuit has latch-up immunity and highrobustness. These characteristics permit the proposed circuit to apply to power clamp circuit. Consequently, the proposed LIGBT-based ESD protection circuit with a latch-up immune characteristiccan be applied to analog integrated circuits.