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"Electric characteristic"

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"Electric characteristic"

Electrical Characteristics of Pressure Device with Graphene Oxide Composite Structure
Yong Woo Kim, Gi Yeon Roh, Hyeong Seok Sung, Woo Jin Choi, Yong Jae Ahn, Seong Eui Lee
J Korean Inst Electr Electron Mater Eng 2019;32(2):93-99.   Published online March 1, 2019
DOI: https://doi.org/10.4313/JKEM.2019.32.2.93
A pressure sensor is a device that converts an applied physical pressure into an electrical signal. Such sensors have a range of applications depending on the pressure level, from low to high pressure. Sensors that use physical pressure, when compared to those operating under air pressure, are not widely applied as they are inefficient. To solve this problem, graphene oxide, which exhibits good mechanical and electrical characteristics, was used to increase the efficiency of these pressure sensors. Graphene oxide has properties that control the movement of charges within the dielectric. Exploiting these properties, we evaluated the change in electrical characteristics when pressure was applied according to the ratio and thickness of the oxidation graph added to the pressure sensor.
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Preparation of ITO Thin Films by FTS(Facing Targets Sputtering) Method
J Korean Inst Electr Electron Mater Eng 2004;17(11):1230-1233.   Published online November 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.11.1230

Citations

Citations to this article as recorded by  
  • Properties of ZrO2 Gas Barrier Film using Facing Target Sputtering System with Low Temperature Deposition Process for Flexible Displays
    Ji Hwan Kim, Do Hyun Cho, Sun Young Sohn, Hwa Min Kim, Jong Jae Kim
    Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(5): 425.     CrossRef
  • Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System
    Jin Woon Son, Yong Jin Park, Sun Young Sohn, Hwa Min Kim
    Journal of Korean Institute of Electrical and Electronic Materials Engineers.2009; 22(12): 1028.     CrossRef
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The Dielectric Characteristics of Turn-to-Turn Insulation for DC Reactor Type HTSFCL
Seung Myeong Baeg, Jong Man Jeong, Chang Hwa Lee, En Ban Dung Lyu, Sang Hyeon Kim
J Korean Inst Electr Electron Mater Eng 2003;16(12s):1299-1304.
DOI: https://doi.org/10.4313/JKEM.2003.16.12s.1299
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