β-Ga₂O₃ is an ultra-wide bandgap semiconductor promising for high-power electronic applications; however, heteroepitaxial growth on sapphire is challenging lattice and symmetry mismatch. In this study, β-Ga₂O₃ thin films were grown on C-plane sapphire substrates with various off-axis angles (0–12°) using mist-CVD, and the influence of substrate miscut on structural and optical properties was investigated. All films grown at 900°C exhibited (-201) oriented β phase. The crystal quality was strongly dependent on the off-axis angle, with intermediate off-axis angles (Δ_a = 6–8°) showing the narrowest rocking curve width. Off-axis substrates promoted step-aligned growth behavior compared to on-axis growth. Optical measurements revealed enhanced transmittance and wider bandgap values (4.92–4.95 eV) for off-axis samples compared to the on-axis film (4.69 eV). The findings provide practical guidelines for optimizing heteroepitaxial β-Ga₂O₃ growth on low-cost sapphire substrates for high-performance device applications.

e investigated the effects of post-annealing in vacuum, nitrogen, and hydrogen atmospheres on the structural, electrical, and optical properties of 600 nm thick Al-doped ZnO (ZnO:Al) thin films deposited by RF magnetron sputtering at room temperature. Post-annealing in hydrogen atmosphere at 400℃ for 1 hour showed the most significant improvement in electrical properties. Resistivity decreased from 9.11×10⁻³ to 1.4×10⁻³ Ω·cm, electron mobility increased from 4.11 to 18.23 cm²/V·s, and electron carrier concentration increased from 1.63×10²⁰ to 4.85×10²⁰ cm⁻³. In contrast, post-annealing in vacuum and nitrogen atmospheres resulted in degraded electrical properties due to oxygen and nitrogen chemisorption at grain boundaries. The enhancement in hydrogen-annealed films was attributed to the formation of additional oxygen vacancies and desorption of adsorbed oxygen species from grain boundaries. All films maintained excellent optical transparency of 80-90% in the visible range. The optical bandgap exhibited a blue-shift from 3.365 eV to 3.624 eV due to the Burstein-Moss effect induced by the increased electron carrier concentration. These results confirmed that hydrogen atmosphere post-annealing is the most effective method for enhancing the electrical conductivity of ZnO:Al thin films while maintaining high optical transparency.

In this study, Y₂O₃ thin films were deposited on Si(100) wafers using an RF sputtering system with a Y₂O₃ target. The Y₂O₃ thin film was confirmed to have a thickness of 227 nm/min and a uniformity of 1.34% at a substrate temperature of 400℃. All samples were annealed at 600, 800, and 1,000℃ for 1 hour in an O₂ gas atmosphere using the furnace. The analysis of the XRD patterns revealed that the peak intensity increased with annealing up to 800℃, but decreased when the annealing temperature was raised to 1,000℃. The XPS analysis confirmed the onset of crystallization at 800℃, in agreement with the trends observed in the XRD results. According to the AFM results, the surface became slightly smoother after heat treatment, as indicated by a reduced RMS roughness of approximately 1.792 nm.

Silicon carbide (SiC), with its wide bandgap and strong resistance to radiation and thermal conditions, is a promising material for ultraviolet (UV) photodetector applications under harsh environments. In this study, porous SiC thin films with thicknesses of 20, 50, and 80 nm were fabricated on 4H-SiC substrates using aerosol deposition (AD), which enables roomtemperature film formation. The device with a 50 nm-thick film exhibited the highest photoresponse under UV-C illumination (260 nm), achieving a maximum photo-to-dark current ratio (PDCR) of 205.2, a responsivity of 0.058 A/W, an external quantum efficiency (EQE) of 27.71%, and a specific detectivity (D*) of 7.9×10¹¹ Jones. These results are attributed to an optimized balance between photon absorption and carrier transport in the porous structure. The findings confirm the potential of ADfabricated porous SiC films for highly sensitive and scalable UV photodetector applications.

κ-phase Ga₂O₃ is a wide-bandgap semiconductor that has attracted attention for power and optoelectronic device applications. However, its crystal quality and optical properties are highly dependent on the growth temperature, which motivates the need for a systematic study. In this work, κ-Ga₂O₃ thin films were grown on AlN/sapphire templates using mist-CVD at different temperatures. At lower temperatures (400℃), films exhibited incomplete crystallization and partial opacity, whereas higher growth temperatures (500-700℃) produced transparent films with improved properties. The bandgap was found to increase with temperature, consistent with reported values for 600-700℃, and XRD/XRC analysis confirmed that crystal quality improved with higher growth temperature. AFM analysis further revealed reductions in surface roughness and grain size variation at elevated temperatures. These findings indicate that an optimal growth window of 600-700℃ enables high-quality κ-Ga₂O₃ films, with potential implications for integrating this material on other hexagonal substrates such as SiC and GaN.

Thermal batteries are designed to activate at high temperatures (~500℃), therefore, the electrodes used in these systems are typically made into pellet form using compression molding techniques that do not involve polymer binders. However, the compression molding technique poses limitations in scaling up the electrode area without increasing thickness for high-power properties. Additionally, the tape casting method has been studied as a way to solve with, but too low a loading level is still an obstacle to practical use. This study fabricated a film cathode of high loading level (35.79 mAh·cm^-2) using the tape casting method for these problem. As utilized fabricated cathode, it investigated the influence of electrode thickness and density on electrochemical performance. Furthermore, a film cathode with a larger area but the same amount of active material as the pellet was fabricated, enabling the design of high-power cells with the same energy density. We expect that the fabricated film cathode with a high loading level and scalable area will enable the development of various thermal battery designs.

NTC (negative temperature coefficient) thermistors are semiconductor ceramics whose resistance decreases with increasing temperature, making them essential components in various temperature sensing applications. Typically, ceramic materials are sintered at high temperatures exceeding 1,150°C. However, in laminated devices incorporating internal electrodes, co-sintering can lead to cracking and mechanical failure due to mismatches in the thermal expansion coefficients between the ceramic layers and metal-based electrodes. Moreover, the use of noble metal electrodes increases production costs. To address these challenges, a low-temperature sintering approach is required. Previous studies have demonstrated that incorporating glass frit can reduce the sintering temperature of ceramics, although this often results in increased electrical resistance. In this study, NiMnCoO₄ (NMC) ceramics, as a representative NTC thermistor composition, were prepared with the addition of 10 wt% glass frit. To mitigate the resulting increase in resistivity, trace amounts (1 wt%) of various metal oxides, including CuO, ZnO, and MnO, were introduced. Among these, the addition of CuO notably decreased both the resistivity and B constant values. In contrast, MnO had little effect on resistivity, while ZnO led to an increase. With respect to the B25/85 constant, samples containing MnO and ZnO exhibited higher values than those without metal oxide additives. These findings indicate that the incorporation of 1 wt% CuO is effective in reducing the increased resistivity in NMC ceramics subjected to low-temperature sintering via glass frit addition.

Molybdenum disulfide (MoS₂) is a promising 2D semiconductor material for low-power electronics due to its excellent electrical properties and compatibility with conventional processes. In this study, MoS₂ thin films deposited by RF sputtering were etched using Cl₂/Ar plasma in an ICP system. The effects of Cl₂ gas ratio, RF power, and process pressure on etch rate and MoS₂/SiO₂ selectivity were investigated. Optimal results were obtained at 25% Cl₂, achieving ~38 nm/min etch rate and selectivity of 3.0. Increased source power improved both etch rate and selectivity, while higher bias power enhanced etching but reduced selectivity due to stronger ion bombardment. XPS analysis confirmed Mo－Cl and S－Cl bond formation after etching, indicating chemical reactions and some by-product residue. These results provide insights into optimized plasma etching of sputtered MoS₂ films for advanced 2D device fabrication

The continuous and long-lasting monitoring of physiological signals induced from the human body is crucial for health monitoring, disease diagnosis, and treatment. In this study, we have reported the Seebeck effect-based flexible selfpowered temperature sensor which can convert the electric signals from lateral temperature difference. For demonstrating temperature sensor arrays, the p-type thermoelectric (TE) composite films were fabricated by dispersing the Bi_0.5Sb_1.5Te₃ (BST) powders inside poly-vinylidene fluoride matrix and subsequently attached to the patterned electrode foils. The inorganic BST powders-embedded TE composite films with activated area of 0.5 × 1 cm² harvest a maximum voltage of 1.7 mV, a maximum current of 5.6 mA, and an output power of 2.6 nW from the temperature gradient (ΔT) of 20 K. Finally, the fabricated selfpowered temperature sensor array well detected the pattern images of external thermal source of ΔT = 20 K. This study manifests flexible temperature sensor array which paves the way for further advancements in this field.

In this study, we investigated the electrical stability and performance enhancement of In₂O₃ thin-film transistors (TFTs) through hydrogen peroxide (H₂O₂) and ultraviolet (UV) treatment under controlled temperature conditions. The In₂O₃ TFTs were fabricated using a sol-gel process, followed by H₂O₂ treatment at 40, 50, and 60℃ in combination with UV irradiation. The impact of these processing conditions on the device characteristics, including mobility (μ), threshold voltage (Vth), subthreshold swing (S/S), and on/off current ratio, was systematically analyzed. The results indicate that the 50℃ TFTs exhibited the most stable electrical performance, with minimal Vth shift under negative bias stress (NBS) conditions and optimized switching behavior. Furthermore, static inverter measurements confirmed the reliable voltage transfer characteristics (VTCs) and gain performance of the optimized In₂O₃ TFTs. These findings suggest that the proposed H₂O₂ and UV treatment technique can effectively improve the reliability and long-term stability of In₂O₃-based electronic devices, making them promising candidates for future electronic applications.

Recently, oxide semiconductors have assumed a pivotal role in electronic displays and transparent electronic devices such as amorphous indium gallium zinc oxide (a-IGZO), characterized by high electron mobility and excellent stability. a- IGZO is very suitable for next-generation applications such as flexible displays because it is possible to manufacture highperformance transistors even at low temperatures. However, since the electrical properties tend to deteriorate in hightemperature environments, research aimed at improving thermal stability is needed. In this study, a low-temperature plasma annealing process was introduced to improve the high-temperature stability of the a-IGZO thin film. This process enhances electron mobility by reducing defects in the a-IGZO film and provides stable device performance even under high-temperature conditions. As a result of the experiments of 5 min, 10 min, 15 min, and 20 min, the a-IGZO TFT, which was subjected to plasma annealing at 160℃ for 5 min, showed the best electrical performance, especially in charge mobility and current-voltage characteristics. The technical potential for improving the performance of a-IGZO-based display device was emphasized, and the foundation for applying this power generation to flexible displays and next-generation electronic devices was laid. Future research will focus on determining the optimal annealing conditions by exploring various temperature ranges and plasma parameters to integrate these results into the actual device manufacturing process. These efforts are expected advance significantly to advancing next-generation high-performance display technology.

Next-generation display technologies, including rollable and foldable displays, are advancing rapidly, enabling innovative and versatile form factors. Flexible displays predominantly utilize materials such as Polyimide (PI), Colorless Polyimide (CPI), and Thermoplastic PolyUrethane (TPU) due to their exceptional flexibility and durability. However, a significant challenge lies in the lack of standardized criteria for evaluating the durability of these flexible substrates. In this study, the durability of these materials under rolling conditions was investigated. This study establishes a standardized methodology for evaluating flexible materials used in rollable displays. Experiments were performed on PI, including rolling and scratch tests with varying indenter sizes. Friction data from the scratch tests, combined with cross-sectional analyses, were examined using optical microscopy and Scanning Electron Microscopy (SEM). The scratch test results revealed that PI films with lower elastic recovery exhibited distinct damage patterns during rolling cycles, especially when smaller indenter radius were used. As the number of rolling cycles increased, the critical force decreased rapidly. This behavior was attributed to the weakening or breaking of atomic bonds within the film. This was further confirmed by SEM images, which revealed delamination of the film from the surface after rolling.

Piezoelectric thin films have become increasingly significant in applications such as MEMS devices, wearable electronics, and lab-on-a-chip systems due to the miniaturization and integration of electronic devices. For piezoelectric thin films, even when an electric signal is applied in the thickness direction, greater deformation can often be observed in the in-plane direction, which is perpendicular to the electric field. Therefore, piezoelectric thin film devices are frequently designed using the transverse mode. As a result, it is crucial to evaluate piezoelectric thin films by measuring their transverse piezoelectric coefficient. This tutorial paper introduces a method for evaluating the effective transverse piezoelectric coefficient (e_31,f) of piezoelectric thin films using laser Doppler vibrometry (LDV). Additionally, the paper outlines a step-by-step procedure for measuring e31,f while using Bi_1/2Na_1/2TiO₃-based piezoelectric thin films as an example. This tutorial is expected to provide a practical and valuable method for measuring and analyzing the transverse piezoelectric properties, thereby supporting the development of new piezoelectric thin film materials.

In this study, the effect of thickness on the Sn-doped β-Ga₂O₃ thin films was investigated. β-Ga₂O₃ is a next-generation material for power semiconductors and optoelectronics owing to its remarkable properties, such as an ultra-wide bandgap, excellent thermal and chemical stability, and large breakdown voltage. However, its inherently low conductivity can be limiting in applications that require high conductivity; therefore, improving the conductivity of β-Ga₂O₃ is important. In this study, Sn-doped β-Ga₂O₃ thin films with various thicknesses were deposited on β-Ga₂O₃ substrates. All the fabricated samples exhibited β-phase with a uniform and dense surface and transmittance of above 80% in the visible region. In particular, the 100 nm samples showed the highest carrier concentration and mobility and the lowest resistivity. Thus, these findings are expected to play an important role in improving the performance of devices by controlling the thickness of thin films.

Al-Mo thin films were fabricated using combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Al-Mo sample library was grown with various chemical compositions and electrical resistivities, which provided important information for selecting the most suitable materials for SAW devices. As the SAWs generated from piezoelectric materials are significantly affected by the resistivity and density of the interdigital transducer (IDT) electrodes, three types of Al-Mo thin films with different Al contents were fabricated. The thickness of the Al-Mo thin film used in the SAW-IDT electrode was fixed at 150 nm. As the Al content of the Al-Mo thin film decreased from 81.2 to 30.3 at%, the resistivity decreased slightly from 5.43±0.15 to 4.87±0.1×10^-5 Ω-cm, whereas the calculated density increased significantly from 4.1 to 7.9 g/㎤. The SAW device composed of Al-Mo IDT electrodes resonated at 143 MHz without frequency shifts; however, the selectivity of the resonant frequency and insertion loss deteriorated as the Al content decreased. This suggest that the resonant characteristics of the SAW devices fabricated with Al-Mo thin films were more strongly influenced by the material density rather than the electrical properties of the IDT electrodes.

In this study, the electrical properties of zinc oxide (ZnO) thin-film transistors (TFTs) based on oxide semiconductors were analyzed. As interest in next-generation transparent and flexible displays grows, ZnO, which offers high field-effect mobility and transparency, has emerged as a promising material to overcome the limitations of amorphous silicon (a-Si)-based TFTs. ZnO has a wide bandgap and optical transparency and can be deposited on various substrates at low temperatures, making it a suitable channel material for future display devices. In this study, ZnO TFTs were fabricated with an inverted staggered structure using a p⁺⁺ Si wafer coated with SiO₂ as the substrate. The ZnO channel layer was deposited by RF magnetron sputtering, and the ITO source/drain electrodes were formed using an e-beam evaporator. The electrical characteristics was evaluated using Keithley 4200A-SCS parameter analyzer. Mobility, On/Off ratio, and subthreshold swing (SS) were calculated from the measurements.

The display industry has recently been at the forefront of innovative advancements in modern electronic devices. Technological progress such as flexible display holds significant potential across various application fields, particularly in wearable devices and rollable displays. A low-temperature process is essential for fabricating such displays. One of the key technologies in displays is the thin film transistor (TFT), with amorphous indium gallium zinc oxide (a-IGZO) receiving particular attention. a-IGZO is widely applied in high-performance displays due to its high charge mobility and stability. While a thermal treatment above 350℃ is typically required to maximize the electrical performance of a-IGZO TFTs, such high temperatures pose challenges for utilizing polymer substrates like plastics. Here, we thesis investigates the simultaneous lowtemperature plasma annealing process to develop next-generation high-performance flexible display devices. To define the optimal temperature, devices were fabricated and analyzed at varying temperatures of 40℃, 80℃, 120℃, and 160℃. Experimental results indicated that devices fabricated at 160℃ and 80℃ exhibited superior performance, with those at 160℃ demonstrating better performance in terms of current ratio, threshold voltage, and subthreshold swing. These findings confirm that the simultaneous low-temperature plasma annealing process is effective for next-generation high-performance displays.

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in siliconbased photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

With the recent development of emerging technologies, information acquisition and delivery between users has been actively conducted, and inorganic thin film transfer technology that effectively transfers various materials and devices is being studied to develop flexible electronic devices accordingly. This is aimed at innovative structural changes and functional improvement of electronic devices in the era of the Internet of Things (IoT). In particular, advanced technologies such as micro- LEDs are used to realize high-resolution flexible displays, and the possibility of heterogeneous integrated technologies can be presented by precisely transferring materials to substrates through various transfer process. This paper introduced physical, chemical, and self-assembly transfer methods based on inorganic thin film materials to implement heterogeneous integrated flexible semiconductor systems and introduces the results of application studies of semiconductor devices obtained through different transfer technologies. These studies are expected to bring about innovative changes in the field of smart devices, medical technology, and user interfaces in the future.

This work focuses on improving the light-harvesting efficiency of thin-film silicon solar cells through innovative multi-architecture surface modifications. To create a regular optical structure, a lithographic process was performed to form it on a glass substrate through various etching processes, from Etch-1 to Etch-3. AZO was deposited on top of the structures and re-etched to create a multi-architectural surface. These surface-modified structures improved the light absorption and overall performance of the solar cell through changes in optical and physical properties, which we will analyze. In addition, we investigated the effect of post-cleaning on the etched glass structures through EDX analysis to understand the mechanism of the etching action. The results of this study are expected to provide important guidelines for the design and fabrication of solar cells and other photovoltaic devices.

(La0.7Sr0.3)(Mn1-xFex)O3 (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO2/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B25/65-value increased. Electrical resistivity, TCR and B25/65-value of the (La0.7Sr0.3)(Mn0.88Fe0.12)O3 thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott’s VRH model.

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a lowcost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO4:Sm3+ thin films can be controlled by varying annealing temperature.

The effect of sputtering power on the amorphous Ga₂O₃ thin film deposited using the radio frequency sputtering system was evaluated. Amorphous Ga₂O₃ is cheaper and more efficiently fabricated than crystalline Ga₂O₃, and is studied in various fields such as RRAM, photodetector, and flexible devices. In this study, amorphous Ga₂O₃ was deposited by radio frequency sputtering system and represented a transmittance of over 80% in the visible light region and a homogeneous and dense surface. The optical band gap energy decreased as the sputtering power increased owing to the quantum size effect. Thus, the specific band gap of amorphous Ga₂O₃ can be obtained by adjusting the sputtering power, it indicates amorphous Ga₂O₃ can be used in various fields.

In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

For decades, sputtering as a physical vapor deposition (PVD) method has been a widely used technique for film coating processes. The sputtering enables oxides, metals, alloys, nitrides, etc to be deposited on a wide variety of substrates from silicon wafers to polymer substrates. Meanwhile, transparent conductive oxides (TCOs) have played important roles as electrodes in electrical applications such as displays, sensors, solar cells, and thin-film transistors. TCO films fabricated through a sputtering process have a higher quality leading to an improved device performance than other films prepared with other methods. In this review, we discuss the mechanism of sputtering deposition and detail the TCO materials. Related technologies (processing conditions, materials, and applications) are introduced for electrical applications.