This paper proposes a circular sequential lighting control method to reduce current imbalance and luminance deviation among multiple LED modules in AC-powered LED lighting systems. Conventional fixed-sequence lighting control repeatedly prioritizes the same LED modules in every rectified voltage cycle, which leads to unequal current distribution, luminance non-uniformity, and the accelerated degradation of specific modules during long-term operation. To address these limitations, a circular sequential lighting strategy is introduced, in which the lighting order is cyclically rotated at every rectified cycle, ensuring that all LED modules experience equal lighting opportunities. A prototype AC-LED lighting system consisting of four series-connected LED modules was implemented and experimentally evaluated. The results demonstrate that, while the conventional fixed-sequence method produces a maximum average current deviation of up to 1.6 mA among modules, the proposed method equalizes the average current across all modules to approximately 17.1 mA. Furthermore, the flicker index remains at 0.13, which is comparable to that of the conventional method, indicating that luminance uniformity is improved without degradation of optical performance. The proposed circular sequential lighting control effectively distributes electrical stress, enhances luminance uniformity, and improves long-term reliability, making it a practical and efficient solution for high-quality AC-LED lighting applications.

The recent rapid adoption of electric vehicles (EVs) is creating new load characteristics in the distribution system, and in particular, the widespread use of single-phase charging methods is exacerbating phase load imbalances, leading to voltage unbalance issues. Such voltage imbalances can undermine the stability of the distribution system and may cause side effects such as reduced power quality and shortened equipment lifespan. This study proposes a smart distribution panel system that can detect voltage imbalance issues caused by uneven electric vehicle charging loads in real time and actively compensate for them. The proposed system aims to contribute to the stability and power quality improvement of the distribution network by integrating a load balancing algorithm with inter-phase voltage monitoring functionality.

Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 10¹⁷ to 6 × 10¹⁷ cm^-3) and JFET regions (from 1 × 10¹⁶ to 7 × 1016 cm^-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 10¹⁷ cm^-3 and 5.3 × 1017 cm^-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 10¹⁷ cm^-3 and 1.5 × 10¹⁶ cm^-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm² and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 10¹⁷ cm^-3 and 5.0 × 10¹⁶ cm^-3, the Ron,sp was reduced to 1.31 mΩ·cm² while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.

Silicon carbon nitride (SiCN) thin films are promising materials for copper diffusion barriers and hybrid bonding in semiconductor processes. Oxidation-resistant films are increasingly critical for realizing high-reliability devices, highlighting the need for process control and property evaluation. In this study, we analyzed the thin film properties as a function of tetramethylsilane (4MS) gas partial pressure ratio (PPR), deposition temperature, and dual-power plasma conditions in a PECVD-based SiCN deposition process. Based on the results, we experimentally demonstrated that the refractive index can be a valid indicator for oxidation resistance evaluation. The application of dual-power plasma conditions was instrumental in enhancing oxidation resistance. Under these conditions, the refractive index reached approximately 1.90 even at 200℃, comparable to values observed in films deposited at 350℃. These findings provide a basis for predicting oxidation resistance and optimizing low-temperature conditions, with applications in next-generation semiconductor and packaging technologies requiring high reliability.

(Bi_1/2Na_1/2)TiO₃(BNT) piezoelectric ceramics are one of the promising materials that can replace Pb(Zr, Ti)O₃(PZT) piezoelectric ceramics due to the high electromechanical strain properties. However, it is still difficult to use practical applications because the required electric field for inducing electromechanical strain is relatively higher than that of PZT ceramics. To overcome this problem, it has been intensively studied on doping impurity or modifying other ABO₃ for BNTbased piezoelectric ceramics. Therefore, this study investigated the effects of La₂O₃ doping on the phase transition behavior and electromechanical strain properties in BNT-SrTiO₃ (BNT-ST) lead-free piezoelectric ceramics. In the case of the temperaturedependent dielectric properties, it was confirmed that a phase transition from ferroelectrics to relaxors is induced with increasing La₂O₃ content. As a result, the electromechanical strain properties of BNT-ST ceramics were improved. The highest Smax/Emax value corresponding to 300 pm/V was obtained at 2 mol% La₂O₃-dopped BNT-ST ceramics. Accordingly, this study successfully demonstrated that La₂O₃ doping is effective on the inducing phase transition from ferroelectrics to relaxors and the improving electromechanical strain properties of BNT-ST lead-free piezoelectric ceramics.

As complementary metal-oxide semiconductor (CMOS) is scaled down to achieve higher chip density, thin-film layers have been deposited iteratively. The poor film uniformity resulting from deposition or chemical mechanical planarization (CMP) significantly affects chip yield. Therefore, the development of novel fabrication processes to enhance film uniformity is required. In this context, high-pressure deuterium annealing (HPDA) is proposed to reduce the surface roughness resulting from the CMP. The HPDA is carried out in a diluted deuterium atmosphere to achieve cost-effectiveness while maintaining high pressure. To confirm the effectiveness of HPDA, time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and atomic force microscopy (AFM) are employed. It is confirmed that the absorbed deuterium gas facilitates the diffusion of silicon atoms, thereby reducing surface roughness.

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a lowcost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

Recently, renewable energy has been increasing in Korea to reduce greenhouse gas, and solar power generation, which accounts for the largest proportion of renewable energy, is noteworthy. The government policy will further increase solar power generation. In order to implement the policy, it is important to understand the current status of domestic solar power generation facilities. Therefore, the current status of solar power generation facilities in Jinju city close to the south coast and Jeonju city close to the west coast was investigated and compared. By 2020, 618 solar power plants had been installed in Jeonju city and 269 in Jinju city. However, there is not much difference in the amount of solar power generation for business at 9 GWh. The reason is that Jinju city has a lower population density than Jeonju city, so there are enough places to install a large-scale solar power facilities with a large power generation capacity. Monthly solar power generation was the highest in April in both Jeonju city and Jinju city and the lowest in January. In particular, in December, Jinju city showed more solar power generation than Jeonju city because of the large amount of insolation, long sunshine hours, and few clouds.

In recent years, the challenge of higher energy efficiency has emerged as urban buildings have become taller, and the area of window glasses has increased. To address the problem of energy efficiency in buildings, research on smart windows is being actively conducted. In this study, an accelerated experiment for thermal stability was conducted to fabricate a liquid crystal cell applicable to external windows. It was confirmed from the study that the function is maintained even in a high-temperature external environment through the change in transmittance by voltage. Compared with the initial transmittance, after the passage of time, the smart window cell to which the sealant was applied showed a small change in transmittance of 1~2%. This result confirmed the thermal stability of the liquid crystal-based smart window.

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 μm for the fabrication of power silicon devices.

This study focuses on a pillar in which is implanted a P-type maneuver under a P base. This structure is called a super junction structure. By inserting the pillar, the electric field concentrated on the P base is shared by the pillar, so the columns can be dispersed while maintaining a high breakdown voltage. Ten pillars were generated during the multi epitaxial process. The interval between pillars is varied to optimize the electric field to be concentrated on the pillar at a threshold voltage of 6 V, a yield voltage of 4,500 V, and an on-state voltage drop of 3.8 V. The density of the filler gradually decreased when the interval was extended by implanting a filler with the same density. The results confirmed that the size of the depletion layer between the filler and the N-epitaxy layer was reduced, and the current flowing along the N-epitaxy layer was increased. As the interval between the fillers decreased, the cost of the epitaxial process also decreased. However, it is possible to confirm the trade-off relationship that deteriorated the electrical characteristics and efficiency.

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

In this study, the sterilization property of E. coli was established using a plasma generator with a flexible electrode structure. The bacterial suspension was prepared based on the McFarland standard 0.50 (1.5×10⁸ CFU/mL) concentration and a specific amount was inoculated on the plate medium. After the plasma was discharged 3 cm away from the plasma generator in the range of 30s to 5 min and the results compared to the control group, the observed colonies that were formed decreased significantly as the plasma discharge time increased.

The alignment characteristics of liquid crystal (LC) molecules on a solution-derived lanthanum zinc oxide (LZO) film under ion-beam irradiation were demonstrated. Using the solution process, an LZO film was fabricated on the glass substrate and cured at 100℃. Afterwards, ion-beam irradiation was performed following the LC alignment method. Using this film, an LC cell was fabricated and the characteristics of the LC alignment were verified. Cross polarizing microscopy and the crystal rotation method were used to investigate the alignment state of the LC molecules on the LZO films. Furthermore, field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to explore the effect of the ion-beam irradiation on the LZO film. Through these, it was confirmed that the ion-beam irradiation induced surface modification, which demonstrated anisotropic physical and chemical surface characteristics. Due to this, uniform LC alignment was achieved. Finally, the residual DC and anchoring energy of the LC cell based on the LZO films were measured using a capacitance-voltage curve.

Raman spectra of a-C:H thin films deposited with an unbalanced magnetron sputtering system showed that the G peak shifted to a higher wavenumber as the target power density increased and ID/IG ratio increased from 0.902 to 1.012. Moreover, the transmittance of a-C:H films fabricated at 60 nm tended to decrease with increasing target power density; at 550 nm in the visible light region, the transmittance decreased from 69% to 58%. The rms surface roughness values of the a-C:H thin films decreased with increasing target power density, and varied from 1.11 nm to 0.71 nm. In order to achieve efficient light trapping, the light scattering at the rough interface must be enhanced. Consequently, the surface roughness of the thin film will decrease with the target power density. Further, the refractive index and reflectivity of the a-C:H thin films increased with increasing target power density; however, the Brewster angle decreased with the target power density. Hence, dye-sensitized solar cells using an a-C:H antireflective coating increased the CE, VOC, and JSC by approximately 8.6%, 5.5%, and 4.5%, respectively.

TiN thin films were fabricated using an unbalanced magnetron sputtering (UBMS) system, and their structure and surface characteristics as well as their optical and tribological properties were evaluated. The hardness, elastic modulus, adhesive force, surface roughness, and transmittance of the Ti thin films fabricated using the UBMS system were 11.5 GPa, 103 GPa, 27.5 N, 2.45 nm and 20%, respectively. The TiN films prepared with various proportions of nitrogen as the reaction gas exhibited maximum values for the hardness, elastic modulus, critical load, RMS roughness and transmittance of approximately 19.2 GPa, 182 GPa, 27.3 N, 0.98 nm, and 85%, respectively. Moreover, the TiN thin film fabricated under the condition of 30 sccm nitrogen gas showed the optimal physical properties. In summary, the TiN thin films fabricated using the UBMS system exhibited excellent hardness, elastic modulus, adhesion, and smooth surface in addition to good hydrophilic properties.

Various process technologies for manufacturing power inductors are under development. The core goal is to increase the mixing ratio of the soft magnetic powder in the epoxy, and to uniformly disperse it in a molding-type power inductor, manufactured by the injection molding method. In this study, we investigated the effect of dispersant and silane on the dispersion of soft magnetic metal powders in epoxy. We added 0.6 wt% of dispersant and 2.0 wt% of silane, and an excellent dispersibility resulted. Under the conditions of 0.3 wt% of dispersant and 0.5 wt% of silane, we added both dispersant and silane together to observe the effect of their interaction on dispersibility. Similarly, the addition of 0.3 wt% of dispersant and 0.1 wt% of silane resulted in a sharp increase in viscosity, considered to be due to the interaction of the dispersant and silane. The addition of 0.1 wt% of dispersant with 0.5 wt% of silane resulted in a sharp rise in viscosity, and sedimentation-height decreased sharply due to the dispersion optimization.

We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.

For the investigation of dopant profiles in implanted Si_1-xGe_x, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in Si_1-xGe_x are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of R_p and 1.8% deviations of ΔR_p owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of R_p and 8.1% deviations of ΔR_p in the arsenic implanted Si_0.2Ge_0.8 layer and 8.5% deviations of R_p and 38% deviations of ΔR_p in the Si_0.5Ge_0.5 layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the Si_1-xGe_x layer becomes more important for accurate device scaling and fabrication technologies.

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at 400℃ using SiH₄ or SiCl₄ and GeCl₄ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using SiCl₄ and SiH₄ source were comparatively studied. SiGe films deposited using SiCl₄ source showed a lower growth rate and higher crystallinity than those deposited using SiH4 source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

Various Ni-doped carbon (C：Ni) thin films were fabricated using different Ni target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the structural, physical, surface, and electrical properties of C：Ni films were investigated. The UBM C：Ni thin films exhibited uniformly smooth surfaces. The rms surface roughness and friction coefficient values of the C：Ni films decreased with the increase in target power density. The physical properties of the films such as hardness and elastic moduli increased while their electrical properties such as resistivity decreased with the increase in the target power density. These results show that an increase of the power density leads to an increase in the proportion of Ni and nanocrystallization of the amorphous carbon film; this contributes to the changes observed in the physical and electrical characteristics.

A molding-type power inductor is an inductor that uses a hybrid material that is prepared by mixing a ferrite metal powder coated with an insulating layer and an epoxy resin, which is injected into a coil-embedded mold and heated and cured. The fabrication of molding-type inductors requires various techniques such as for coil formation and insertion, improving the magnetic properties of soft magnetic metal powder, coating an insulating film on the magnetic powder surface, and increasing the packing density by well dispersing the powder in the epoxy resin. Among these aspects, researches on additives that can disperse the metal soft magnetic powder having the greatest performance in the epoxy resin with high charge have not been reported yet. In this study, we investigated the effect of silanes, KBM-303 and KBM-403, and a commercial dispersant on the dispersion of metal soft magnetic powders in epoxy resin. The sedimentation height and viscosity were measured, and it was confirmed that the silane KBM-303 was suitable for dispersion. For this silane, the packing density was as high as about 72.49%. Moreover, when 1.2 wt% of dispersant BYK-103 was added, the packing density was about 80.5%.

In this study, (1-x)(Na_0.52K_0.443Li_0.037)(Nb_0.883Sb_0.08Ta_0.037)O₃-x(Bi_0.5(Na_0.7K_0.3)_0.5ZrO₃ ceramics were fabricated by BNKZ substitution using a conventional solid-state method to develop excellent lead-free piezoelectric ceramics for piezoelectric actuators; their dielectric and piezoelectric properties were then investigated. All specimens were in the orthorhombic phase. NKL-NSTO₃ ceramics with x=0.01 showed excellent piezoelectric properties. The density (ρ), piezoelectric charge constant (d₃₃), planar piezoelectric coupling coefficient (k_p), mechanical quality factor (Q_m), and dielectric constant (ε_r) had optimized values of 4.56 g/㎤, 208 pC/N, 0.43, 96, and 975, respectively.

In this study, we investigate the SiO₂ current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The SiO₂ CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the SiO₂ CBL is considerably enhanced compared without the SiO₂ CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the SiO₂ CBL.

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed 0.16 cm²/V·s, -6.0 V, and 7.7×10⁴, respectively.

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, BF2 and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with C++ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over 1,000℃. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about 1~5 ㎛, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.

This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile, and many other applications due to their excellent physical and electric properties. Especially, Mo-Cu composites with 5 ~ 20 wt.% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength, and prominent electrical and thermal conductivity. In most of the applications, highly-dense Mo-Cu materials with homogeneous microstructure are required for better performance. In this study, Mo-Cu alloys were prepared by PBM (planetary ball milling) and SPS (spark plasma sintering). The effect of Cu with contents of 5~20 wt.% on the microstructure and thermal properties of Mo-Cu alloys was investigated.