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"Microbolometer"

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"Microbolometer"

Electrical Properties of Manganite Thin Films Prepared by Spin Spray Method
Chang Jun Jeon, Young Hun Jeong, Ji Sun Yun, Woon Ik Park, Jong Hoo Paik, Youn Woo Hong, Jeong Ho Cho
J Electr Electron Mater 2017;30(1):17-22.   Published online January 1, 2017
Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the Mn3+/Mn4+. Typically, the resistivity of 70.5 Ω · ㎝ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at 450℃ for 3 h.
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Regular Paper : Spin Spray-Deposited Spinel Thin Films for Microbolometer Applications
Chang Jun Jeon, Kui Woong Lee, Duc Thang Le, Young Hun Jeong, Ji Sun Yun, Jong Hoo Paik, Jeong Ho Cho
J Electr Electron Mater 2014;27(12):809-814.   Published online December 1, 2014
Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from [(Ni0.30Co0.33Mn0.37)1-xCux]3O4 (0.1≤x≤0.2) solutions and then annealed at 400℃ for 1 h inargon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below 50℃. Typically, the resistivity of 127 Ω·cm and TCR of -5.69%/Kat 30℃ were obtained for x=0.1 films with deposition time of 1 min annealed at 400℃ for 1 h in argon.
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Thin Films and SensorsStructural Properties of Nickel Manganite Thin Films Fabricated by Metal Organic Decomposition
Kui Woong Lee, Chang Jun Jeon, Young Hun Jeong, Ji Sun Yun, Joong Hee Nam, Jeong Ho Cho, Jong Hoo Paik, Jong Won Yoon
J Electr Electron Mater 2014;27(4):226-231.   Published online April 1, 2014
Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of 414.9℃ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA)curve. A single phase of cubic spinel structure was obtained for the thin film annealed from 700℃ to 800℃,which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction(SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2∼3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at 500℃, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.
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A Study on the Design of a ROIC for Uncooled Bolometer Thermal Image Sensor using Reference Resistor Compensation
Seung Woo Yu, Sang Hyeon Kwak, Eun Sik Jung, Man Young Sung
J Electr Electron Mater 2009;22(2):119-122.   Published online February 1, 2009
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Fabrications and Characteristics of Infrared Sensor Composed of λ/4 Absorbing Structure for the Application of NDIR CO2 Gas Sensor
Sung Hyun Lee, Tae Woon Nam
J Electr Electron Mater 2008;21(11):1005-1009.   Published online November 1, 2008
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