Journal of Electrical and Electronic Materials

"N-doped"

Review paper : Improvement of Electrical Performance in the Oxide Semiconductor Thin Film Transistor Using Various Treatment: Jayapal Raja, Nguyen Thi Cam Phu, Than Thuy Trinh; J Korean Inst Electr Electron Mater Eng 2016;29(1):1-5. Published online January 1, 2016; DOI: https://doi.org/10.4313/JKEM.2016.29.1.1

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The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.

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Defect Analysis via Photoluminescence of p-type ZnON Thin Film fabricated by RF Magnetron Sputtering: Hu Jie Jin, Soon Jin So, Choon Bae Park; J Korean Inst Electr Electron Mater Eng 2007;20(3):202-206. Published online March 1, 2007; DOI: https://doi.org/10.4313/JKEM.2007.20.3.202

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Photoluminescence Characteristics of ZnO Nano Needle-like Rods grown by the Hot Wall Epitaxy Method
Sung-Hwan Eom, Yong-Dae Choi
Transactions on Electrical and Electronic Materials.2007; 8(5): 191. CrossRef