Heating cables, widely used in office buildings, factories, streets and railways, deteriorate in electrical insulation during operation. The insulation deterioration of heating cables leads to electric discharges that can cause electrical fires. With this background, this paper dealt with a condition monitoring technique for heating cables by the analysis of discharge signals to prevent electrical fires. Insulation deterioration was simulated using an arc generator specified in UL1699 under AC operation, and the characteristic and propagation of discharge signals were analyzed on a 100 meter-long heating cable. Discharge signals produced by insulation deterioration were detected as a voltage pulse because they are as small as a few mV and they are attenuated through propagation path.The frequency spectrum of discharge signals mainly existed in the range from 70 kHz to 110 kHz, and the maximum attenuation of the signal was 84.8% at 100 meters away from the discharge point. Based on the experimental results, a monitoring device, which is composed of a high pass filter with the cut-off frequency of 70 kHz, a comparator, a wave shaper and a microprocessor, was designed and fabricated. Also, an algorithm was designed to discriminate the discharge signal in the presence of noise, compared with the pulse repetition period and the number of pulse counts per 100ms. In the experiment, the result showed that the prototype monitoring device could detect and discriminate the discharge signals produced at every discharge point on a heating cable.

We investigate a fog-detection CCT control system using low deck lighting as a solution to the forward visibility of pole-type street lamps employed on existing roads. The lighting standards were met with a light source that has less compared with those of pole-type street lamps. The results show that the transmission rate was increased by changing the color temperature by automatically recognizing fog in bad weather and minimizing the phenomenon of lighting. In addition, it was allowed to create a safer and more comfortable driving environment for drivers owing to flicker or light pollution of existing pole-type street lamps. As a result, if lighting is used at a lower level than pole-type street lamps, the accident rate caused by securing the driver’s forward visibility can be reduced sharply and existing problems can be resolved.

ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, λ = 1064 ㎚) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.

Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525∼575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.

Zinc oxide(ZnO) was sputtered on various glass and flexible substrates such as polyethylene terephthalate(PET) and polycarbonate(PC). A Q-switched Nd:YVO4 laser with a wavelength of 1,064 nm was used for the direct etching of ZnO films. It was possible to obtain laser etched line patterns on the ZnO films on PC substrate at some specific laser beam conditions. In the flexible substrates, more thermal energy of laser beam is expected to be spreaded for the etching process.

Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to 120t. The ITO thin films were crystallized at 50t for Si (001) substrates and at 75t for PET substrate. The I`J`O thin films grown onto PET substrate at 120t were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about 7 x 10 ? cm and a transmittance of about 84% at a wavelength of 550 rim. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about 120℃ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at 120℃ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about 2 x 10-4 n·cm and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.