There is an increasing demand for freeform stretchable display technologies capable of overcoming spatial limitations in next-generation platforms such as augmented reality (AR) and virtual reality (VR). To realize such stretchable displays, all constituent materials—including semiconductors, electrodes, insulators, and substrates—must exhibit sufficient mechanical elasticity. To date, stretchable gate insulators have primarily relied on organic polymers such as poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA). However, their practical application is significantly limited by poor electrical properties, including low dielectric constant and instability. In this work, we propose a novel gate insulator structure that minimizes the use of solution-based processes, which often suffer from poor uniformity and may damage underlying layers during fabrication. The proposed structure integrates the advantages of both organic and inorganic materials by employing a hybrid configuration. Specifically, high-k HfO₂ thin films are deposited on both the top and bottom of an organic layer composed of PVP-co-PMMA, poly(melamine-co-formaldehyde) (PMF) as a crosslinking agent, and propylene glycol monomethyl ether acetate (PGMEA) as a solvent. This inorganic–organic–inorganic structure effectively compensates for the inherent electrical limitations of organic materials. As a result, the fabricated thin-film transistors (TFTs) exhibit improved electrical performance and reliability compared to devices employing a single organic gate insulator.

As electric vehicles (EVs) are rapidly adopted worldwide, large numbers are now transported by sea on dedicated car carriers. With this trend, concerns are increasing about fires and explosions caused by battery thermal runaway during marine transport, while existing SOC limits before loading remain largely empirical. This study experimentally investigates gas generation and explosion characteristics of EV lithium-ion cells under thermal runaway conditions representative of enclosed vehicle decks. We identify and quantify the main off-gas components and clarify the flammability behavior and explosion limits of key combustible species. The results provide basic data for assessing EV battery accidents at sea and support the development of safer ventilation and gas-management strategies for ships.

This study investigates the effect of mask material and thickness on the silicon etching profile using a high-density plasma (HDP) etching system, aiming to reduce optical loss in silicon-based optical waveguides. As the mask thickness increased, the etching sidewall angle became steeper. An etching profile angle of 87° was obtained when tetraethyl orthosilicate (TEOS) was used as the mask material, while 80° was obtained for photoresist (PR). This is attributed to electron charging on the mask surface in the plasma. The charged mask modifies the distribution and strength of the electric field depending on its thickness, thereby affecting the trajectory of positive ions accelerated toward the substrate by the bias voltage. Furthermore, Plasma diagnostics using optical emission spectroscopy (OES) and surface composition analysis using field emission Auger electron spectroscopy (FE-AES) revealed that changes in the mask material also alter the reaction pathways and formation characteristics of active species and silicon by-products in the plasma. These results suggest that the mask material influences the overall plasma characteristics, including electron density and ion energy, and plays a critical role in the precise control of silicon etching profiles for high-performance optical device fabrication.

The growing demand for thinner, lighter, and more energy-efficient electronic systems has driven the development of acoustic technologies toward compact and flexible sound generation platforms. Despite significant progress, conventional electromagnetic speakers remain limited by bulky structures, energy losses, and poor compatibility with modern ultrathin devices. In this review, recent advancements in piezoelectric acoustic systems are presented, demonstrating a new generation of speakers capable of producing high-fidelity sound from ultra-slim, lightweight, and mechanically compliant designs. Through refined structural configurations and efficient electromechanical coupling, these piezoelectric exciters achieve strong acoustic output, fast response, and wide frequency operation while drastically reducing component thickness. These exciters also show their suitability for seamless integration into flexible displays, wearable devices, and automotive panels, offering enhanced spatial audio practicality and multifunctional operation, including demonstrative output and sensing. This advancement marks a step toward the convergence of acoustic, haptic, and interactive technologies, for the realization of sustainable and immersive humanmachine interfaces in future electronic and automotive systems.

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are emerging as next-generation semiconductors optimized for high-power and high-frequency applications, with their performance highly dependent on the surface and interface quality of the AlGaN/GaN structure. In particular, the 2-Dimensional Electron Gas (2DEG) formed in the AlGaN layer is susceptible to trapping by surface defects, which degrades electrical characteristics and makes the device vulnerable to degradation. In this study, we propose an approach to enhance device reliability and performance by forming a gallium oxynitride (GaON) interfacial layer through O₂ plasma treatment on the AlGaN surface. This method effectively suppresses interface defects, resulting in improved electrical properties such as reduced interface trap density (Dit), threshold voltage (Vth) shift, increased drain current density (Id), and enhanced transconductance density (gm). Furthermore, this surface treatment demonstrates the potential for process simplification by improving the electrical characteristics of power semiconductor devices without the need for complex deposition steps.

Micro-LEDs, which have a chip size of less than 100 × 100 μm², have been potential candidates for conventional LCDs and OLEDs due to their high optical power, outstanding stability, and nanosecond response time. However, Micro-LED chips are fabricated only on limited substrates due to the high-temperature metal-organic chemical vapor deposition process and lattice-mismatch issues. Therefore, the fabrication of Micro-LED displays requires complex processes such as chip fabrication, transfer, bonding, and repair. Especially, Micro-LED transfer and bonding have been critical challenges for the Micro-LED display commercialization. Here, recent advances in the transfer and bonding of Micro-LEDs are introduced, and novel Micro- LED display fabrication methods are reviewed to provide a practical outlook for both mass production and commercialization of Micro-LED displays.

Ceramic thin plates are widely utilized in various advanced technologies, such as fuel cells and heat dissipation substrates, due to their high mechanical strength and thermal conductivity. However, the trend of thinning ceramic plates increases warpage, which can critically affect product quality and reliability. Therefore, understanding and accurately measuring this warpage has become increasingly important. In this study, a non-contact measurement method, the light sectioning technique, was applied to measure the warpage of thin ceramic plates with a half-cell (anode/electrolyte) structure for solid oxide fuel cells (SOFC) by varying their area and thickness. The relationship between the physical properties of the thin plates and the warpage was analyzed. Additionally, a comparative analysis was conducted to evaluate warpage errors caused by compressive loads during the traditional contact measurement process. Finally, to verify the reliability of the non-contact measurement method, four types of non-contact measurement techniques - light sectioning technique, laser displacement measurement, optical confocal technique, and white-light interferometry technique - were used to compare warpage data by orientation. The results were also compared with those from contact measurement methods to analyze the average warpage values. Through this, the superiority and high reliability of the non-contact measurement method were demonstrated.

κ-phase Ga₂O₃ is a wide-bandgap semiconductor that has attracted attention for power and optoelectronic device applications. However, its crystal quality and optical properties are highly dependent on the growth temperature, which motivates the need for a systematic study. In this work, κ-Ga₂O₃ thin films were grown on AlN/sapphire templates using mist-CVD at different temperatures. At lower temperatures (400℃), films exhibited incomplete crystallization and partial opacity, whereas higher growth temperatures (500-700℃) produced transparent films with improved properties. The bandgap was found to increase with temperature, consistent with reported values for 600-700℃, and XRD/XRC analysis confirmed that crystal quality improved with higher growth temperature. AFM analysis further revealed reductions in surface roughness and grain size variation at elevated temperatures. These findings indicate that an optimal growth window of 600-700℃ enables high-quality κ-Ga₂O₃ films, with potential implications for integrating this material on other hexagonal substrates such as SiC and GaN.

Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 10¹⁷ to 6 × 10¹⁷ cm^-3) and JFET regions (from 1 × 10¹⁶ to 7 × 1016 cm^-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 10¹⁷ cm^-3 and 5.3 × 1017 cm^-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 10¹⁷ cm^-3 and 1.5 × 10¹⁶ cm^-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm² and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 10¹⁷ cm^-3 and 5.0 × 10¹⁶ cm^-3, the Ron,sp was reduced to 1.31 mΩ·cm² while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.

Quantum dots (QDs) offer size-dependent tunability across the infrared to ultraviolet range with narrow emission linewidths and high color purity, making them highly attractive for next-generation light-emitting devices. Quantum dot lightemitting diodes (QLEDs) further combine precise spectral control with scalable, low-cost solution processing, positioning them as strong candidates for wearable, stretchable, and AR/VR display technologies. However, conventional single-emission QLEDs suffer from charge imbalance, efficiency roll-off, and limited operational lifetime, necessitating new device architectures. Tandem QLEDs, which vertically stack multiple emissive layers (EMLs) connected by charge generation layers (CGLs), provide a compelling solution by enabling higher luminance, improved charge balance, and longer lifetime at equivalent current density. The CGL serves as the interfacial region mediating charge injection and generation between adjacent EMLs, directly determining device efficiency and stability. This review highlights recent progress in CGL engineering, categorizing representative designs into planar heterojunction, inorganic-based, and dipole-based configurations. Comparative analysis of their formation mechanisms, material systems, and process compatibilities reveals evolving charge-control strategies that extend beyond material selection. These insights establish design principles for next-generation tandem QLEDs with enhanced efficiency, durability, and manufacturability.

Multilayer ceramic capacitors (MLCCs) are essential for high-capacitance, miniaturized, and reliable electronic applications. This study examines the impact of layer stacking on the dielectric and electrical properties of MLCCs using a BaTiO₃-based dielectric with MgO, Mn₃O₄, Yb₂O₃, V₂O₅, and (BaCa)SiO₃ glass additives. MLCCs with 10 um-thick dielectric layers and varying Ni electrode layers (10, 30, 50, and 100 layers) were fabricated. The dielectric constant increases significantly up to 30 layers due to compressive stress and sintering densification but it becomes linear beyond 30 layers. Dissipation factor and ESR decrease with higher stacking due to improved sinterability, while breakdown voltage declines exponentially from defect accumulation and thermal stress. Insulation resistance decreases but stabilizes relative to capacitance. C-V results show stress-induced polarization suppression, which reduces the dielectric constant under high voltage. Optimized stacking and sintering conditions are crucial for MIL-PRF-32535 compliant MLCC designs.

Abstract In this study, to develop composition ceramics for energy harvesting devices, Pb(Ni_1/3Nb_2/3)O₃-Pb(Zr Ti)O₃ system ceramics substituted with Pb(Mg_1/2W_1/2)O₃ were manufactured by conventional mixed oxide method using Li₂CO₃ and Na₂CO₃ (LNCO) as sintering aids. Their microstructure and piezoelectric properties were also investigated. At the specimen sintered at 930℃, high values of piezoelectric properties appeared: the dielectric constant (εr) of 2,522 planar electromechanical coupling factor kp of 0.602, and k₃₁ of 0.385, d31 = 229 [pC/N], g₃₁ = 10.13 [mV.m/N], Qm of 70, respectively. These values were suitable for the application of devices such as energy harvesting devices and ultrasonic devices.

With the rapid development of digital technologies such as IoT, AI, and big data, electrical energy consumption is rapidly increasing. Electrical facilities that supply electrical energy are operated with high reliability and stability for end-of-life time. In addition, depending on the type of electrical load that consumes electrical energy in various forms, electrical insulation systems deteriorate due to electrical and thermal stress, which reduces electrical and mechanical insulation strength. Due to such continuous stress and electrical transient phenomena, electrical facilities may experience electrical accidents due to electrical insulation breakdown before the expected design lifetime. In addition, periodic inspections according to related regulations must be conducted to prevent unexpected electrical accidents, but this leads to problems in which the electrical facilities cannot be turned off. Therefore, it is believed that an uninterruptible diagnostic judgment technique that determines compliance with related regulations such as electrical facility technology standards, internal wiring regulations, and inspection regulations without turning off the electrical facilities and at the same time detects abnormal conditions of the facilities early, it is possible to prevent electrical accidents and improve the efficiency of electrical facilities. In this paper, we propose an uninterruptible power diagnosis judgment technique that can prevent or reduce electrical accidents in cast-iron transformers by applying judgment criteria of diagnostic sensors for various types of measurement parameters that can diagnose and evaluate the presence or absence of abnormalities in electrical equipment, including partial discharge, and AI algorithms learned from data of diagnostic sensors.

Molybdenum disulfide (MoS₂) is a promising 2D semiconductor material for low-power electronics due to its excellent electrical properties and compatibility with conventional processes. In this study, MoS₂ thin films deposited by RF sputtering were etched using Cl₂/Ar plasma in an ICP system. The effects of Cl₂ gas ratio, RF power, and process pressure on etch rate and MoS₂/SiO₂ selectivity were investigated. Optimal results were obtained at 25% Cl₂, achieving ~38 nm/min etch rate and selectivity of 3.0. Increased source power improved both etch rate and selectivity, while higher bias power enhanced etching but reduced selectivity due to stronger ion bombardment. XPS analysis confirmed Mo－Cl and S－Cl bond formation after etching, indicating chemical reactions and some by-product residue. These results provide insights into optimized plasma etching of sputtered MoS₂ films for advanced 2D device fabrication

Porous polymeric structures with piezoelectric properties have attracted considerable attention in the fields of biomaterials and tissue engineering due to their ability to convert mechanical stimuli into electrical signals. However, conventional fabrication methods for porous structures often face limitations in controlling pore architecture, maintaining structural uniformity, and achieving process reproducibility, in addition to requiring complex processing conditions. To address these issues, we propose a facile and reproducible fabrication method for porous poly (vinylidene fluoride) (PVDF) piezoelectric sponges using molded sugar cubes as sacrificial pore templates. By adjusting the particle size of the sugar templates, the pore size and distribution of the sponges could be effectively controlled, and a uniform open-pore network was achieved. The fabricated sponges were evaluated with a focus on pore morphology, mechanical behavior, and piezoelectric performance depending on the sugar particle size, and these evaluations confirmed the structural properties and functional efficacy. This study presents a simple and reproducible fabrication strategy along with a quantitative analysis method for porous structures, which is expected to enhance process accessibility and practical applicability in the development of piezoelectric polymer-based biomaterial platforms.

Conductive inks are essential for developing flexible and wearable electronic devices, where printability and electrical performance must be finely balanced. However, achieving high conductivity while minimizing costly silver filler content remains a key challenge in ink formulation. In this work, we demonstrate that a simple ball-milling process transforms spherical silver particles into platelet-shaped fillers, dramatically enhancing conductivity at equivalent filler loading. The resulting inks show a reduction in sheet resistance from ~180 Ω/□ to ~ 0.57 Ω/□ at 70 wt% filler content, with improved performance attributed to surface-to-surface contact between platelets. Moreover, we show that filler content influences not only electrical conductivity but also ink viscosity, with the 53.8 wt% formulation achieving a practical balance between conductivity, processability, and cost. This morphology- and composition-controlled ink design offers a scalable strategy for manufacturing high-performance, cost-effective conductive inks suitable for next-generation printed electronics.

The characteristics of each address discharge were investigated when the voltages of the scan and common electrodes were lowered simultaneously during an address period under the same address voltage conditions in an AC plasma display panel. It was confirmed that the delay time of address discharge shortened as the voltage decreased. However, the background light increased because the low scanning voltage generated more discharge between the electrodes of the upper and lower plates in the reset period. To lower the background light, a positive voltage was applied to the address electrode of the lower panel during the period when the rising ramp wave was applied, and a floating voltage was applied to the address electrode during the period when the falling ramp wave was applied during the reset period. As a result, the background light could be lowered by about 30%.

Recently, oxide semiconductors have assumed a pivotal role in electronic displays and transparent electronic devices such as amorphous indium gallium zinc oxide (a-IGZO), characterized by high electron mobility and excellent stability. a- IGZO is very suitable for next-generation applications such as flexible displays because it is possible to manufacture highperformance transistors even at low temperatures. However, since the electrical properties tend to deteriorate in hightemperature environments, research aimed at improving thermal stability is needed. In this study, a low-temperature plasma annealing process was introduced to improve the high-temperature stability of the a-IGZO thin film. This process enhances electron mobility by reducing defects in the a-IGZO film and provides stable device performance even under high-temperature conditions. As a result of the experiments of 5 min, 10 min, 15 min, and 20 min, the a-IGZO TFT, which was subjected to plasma annealing at 160℃ for 5 min, showed the best electrical performance, especially in charge mobility and current-voltage characteristics. The technical potential for improving the performance of a-IGZO-based display device was emphasized, and the foundation for applying this power generation to flexible displays and next-generation electronic devices was laid. Future research will focus on determining the optimal annealing conditions by exploring various temperature ranges and plasma parameters to integrate these results into the actual device manufacturing process. These efforts are expected advance significantly to advancing next-generation high-performance display technology.

The solution-based fabrication process for resistive random-access memory (ReRAM) offers several advantages over conventional vapor deposition processes, including simplicity, cost-effectiveness, and high versatility for coating complex structures over large areas. In this study, a TiO₂-based ReRAM device was fabricated using a solution process with Pt top and P⁺⁺-Si bottom electrodes. The synthesized TiO₂ films contain a residual Cl element as revealed by X-ray photoelectron spectroscopy (XPS). Reversible volatile resistance switching was observed due to the formation of conductive Ti-O-Ti networks in the TiO₂ layer. Post-annealing led to an increase in the threshold voltage (Vth). Asymmetric Current-Voltage characteristics was observed due to the different in the work functions of the electrodes. Additionally, the influence of compliance current settings on filament formation and hysteresis behavior was systematically investigated. The results demonstrated that higher compliance currents enhanced the hysteresis width for both positive and negative voltage bias conditions.

With the extensive industrial growth driven by the Fourth Industrial Revolution and the excessive use of fossil fuels, greenhouse gas emissions have accelerated global warming. Energy harvesting technologies have garnered significant attention as a potential solution to this issue. Among them, triboelectric nanogenerators (TENGs) have emerged as promising candidates for energy collection and conversion. However, TENGs typically face limitations in providing an efficient energy supply due to their high output voltage and low output current. To overcome these challenges, numerous studies have explored various methods to enhance the output performance by increasing the surface area of the triboelectric materials. Herein, we report a high-output TENG fabricated through a simple scratch process. By utilizing sandpaper, typically used for abrasion or polishing, the surface roughness of the triboelectric material PFA was increased through surface scratching. The surface-engineered TENG, prepared through this simple and rapid process, demonstrated enhanced output characteristics with a voltage of 276 V and a current of 72 μA, showing a 21% increase in voltage and a 41% increase in current compared to the non-engineered counterpart, providing sufficient energy to power an LED. These results indicate that the scratch-based surface modification process using sandpaper offers an effective solution for improving triboelectric output performance, establishing TENGs as a key contributor to sustainable energy supply.

Next-generation display technologies, including rollable and foldable displays, are advancing rapidly, enabling innovative and versatile form factors. Flexible displays predominantly utilize materials such as Polyimide (PI), Colorless Polyimide (CPI), and Thermoplastic PolyUrethane (TPU) due to their exceptional flexibility and durability. However, a significant challenge lies in the lack of standardized criteria for evaluating the durability of these flexible substrates. In this study, the durability of these materials under rolling conditions was investigated. This study establishes a standardized methodology for evaluating flexible materials used in rollable displays. Experiments were performed on PI, including rolling and scratch tests with varying indenter sizes. Friction data from the scratch tests, combined with cross-sectional analyses, were examined using optical microscopy and Scanning Electron Microscopy (SEM). The scratch test results revealed that PI films with lower elastic recovery exhibited distinct damage patterns during rolling cycles, especially when smaller indenter radius were used. As the number of rolling cycles increased, the critical force decreased rapidly. This behavior was attributed to the weakening or breaking of atomic bonds within the film. This was further confirmed by SEM images, which revealed delamination of the film from the surface after rolling.

Piezoelectric thin films have become increasingly significant in applications such as MEMS devices, wearable electronics, and lab-on-a-chip systems due to the miniaturization and integration of electronic devices. For piezoelectric thin films, even when an electric signal is applied in the thickness direction, greater deformation can often be observed in the in-plane direction, which is perpendicular to the electric field. Therefore, piezoelectric thin film devices are frequently designed using the transverse mode. As a result, it is crucial to evaluate piezoelectric thin films by measuring their transverse piezoelectric coefficient. This tutorial paper introduces a method for evaluating the effective transverse piezoelectric coefficient (e_31,f) of piezoelectric thin films using laser Doppler vibrometry (LDV). Additionally, the paper outlines a step-by-step procedure for measuring e31,f while using Bi_1/2Na_1/2TiO₃-based piezoelectric thin films as an example. This tutorial is expected to provide a practical and valuable method for measuring and analyzing the transverse piezoelectric properties, thereby supporting the development of new piezoelectric thin film materials.

The display industry has recently been at the forefront of innovative advancements in modern electronic devices. Technological progress such as flexible display holds significant potential across various application fields, particularly in wearable devices and rollable displays. A low-temperature process is essential for fabricating such displays. One of the key technologies in displays is the thin film transistor (TFT), with amorphous indium gallium zinc oxide (a-IGZO) receiving particular attention. a-IGZO is widely applied in high-performance displays due to its high charge mobility and stability. While a thermal treatment above 350℃ is typically required to maximize the electrical performance of a-IGZO TFTs, such high temperatures pose challenges for utilizing polymer substrates like plastics. Here, we thesis investigates the simultaneous lowtemperature plasma annealing process to develop next-generation high-performance flexible display devices. To define the optimal temperature, devices were fabricated and analyzed at varying temperatures of 40℃, 80℃, 120℃, and 160℃. Experimental results indicated that devices fabricated at 160℃ and 80℃ exhibited superior performance, with those at 160℃ demonstrating better performance in terms of current ratio, threshold voltage, and subthreshold swing. These findings confirm that the simultaneous low-temperature plasma annealing process is effective for next-generation high-performance displays.

Precise control over the morphology of nanostructures is critical for tailoring their physical and chemical properties. This study addresses the challenge of developing a simple, integrated method for synthesizing both 1D and 2D colloidal Cu nanostructures in a single system, achieving successful tuning of their localized surface plasmon resonance (LSPR) properties. A facile hydrothermal synthesis utilizing potassium iodide (KI) and hexadecylamine (HDA) is presented for controlling Cu nanostructure morphologies. The key to achieving 1D nanowires (NWs) and 2D nanoplates (NPs) depends on the controlled adsorption of HDA molecules and iodide (I-) ions on specific crystal facets. Depending on the morphologies, the resultant Cu nanostructures exhibit tunable LSPR peaks from 558 nm [nanoplates (NPs)] to 590 nm [nanowires (NWs)]. These results pave the way for the scalable and cost-effective production of plasmonic Cu nanostructures with tunable optical properties, holding promise for applications in sensing, catalysis, and photonic devices.

This research explores the development of [100]-textured barium titanate (BaTiO₃, BT) ceramics using sodium bismuth titanate (Na_0.5Bi_4.5Ti₄O₁₅, NBiT) templates, aimed at leveraging the inherent high dielectric property of BT. However, the attempted texturing was unsuccessful, primarily due to bismuth diffusion from the NBiT templates into the BT matrix below the sintering temperature, at 1,000℃. Systematical exploration about the cause of the failure is involved and alternative approaches are proposed in detail to overcome the challenge. These findings contribute to the understanding of techniques and conditions for textured ceramic fabrication and highlight the need for further research in this area.

As complementary metal-oxide semiconductor (CMOS) is scaled down to achieve higher chip density, thin-film layers have been deposited iteratively. The poor film uniformity resulting from deposition or chemical mechanical planarization (CMP) significantly affects chip yield. Therefore, the development of novel fabrication processes to enhance film uniformity is required. In this context, high-pressure deuterium annealing (HPDA) is proposed to reduce the surface roughness resulting from the CMP. The HPDA is carried out in a diluted deuterium atmosphere to achieve cost-effectiveness while maintaining high pressure. To confirm the effectiveness of HPDA, time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and atomic force microscopy (AFM) are employed. It is confirmed that the absorbed deuterium gas facilitates the diffusion of silicon atoms, thereby reducing surface roughness.

Laser-induced plasmonic sintering of metal nanoparticles (NPs) holds significant promise as a technology for producing flexible conducting electrodes. This method offers immediate, straightforward, and scalable manufacturing approaches, eliminating the need for expensive facilities and intricate processes. Nevertheless, the metal NPs come at a high cost due to the intricate synthesis procedures required to ensure long-term reliability in terms of chemical stability and the prevention of NP aggregation. Herein, we induced the self-generation of metal nanoparticles from Ag organometallic ink, and fabricated highly conductive electrodes on flexible substrates through laser-assisted plasmonic annealing. To demonstrate the practicality of the fabricated flexible electrode, it was configured in a mesh pattern, realizing multi-touchable flexible touch screen panel.

This paper introduces an optimized oxygen (O₂) plasma surface treatment technique to enhance sphere lithography on hydrophobic photoresist surfaces. The focus is on semiconductor manufacturing, particularly the creation of finer structures beyond the capabilities of traditional photolithography. The key breakthrough is a method that makes substrate surfaces hydrophilic without altering photoresist patterns. This is achieved by meticulously controlling the O₂ plasma treatment duration. The result is the consistent formation of nano and microscale patterns across large areas. From an academic perspective, the study deepens our understanding of surface treatments in pattern formation. Industrially, it heralds significant progress in semiconductor and precision manufacturing sectors, promising enhanced capabilities and efficiency.

In this study, the praseodymium-doped yttrium phosphate (YPO₄:Pr³⁺) powder, which is well known for its high luminescent efficiency, and long life in the UV range, was synthesized with various content ratios of Pr₆O₁₁ and calcination temperature. Crystal structure and luminescent properties of various phosphor powders based on different concentrations and calcination conditions were characterized by XRD (X-Ray Diffraction) and PL (photoluminescence) spectrometers. From the XRD analysis, the structure of YPO₄:Pr³⁺ which is calcinated at 1,200℃ was stable tetragonal phase and crystal size was calculated about 25 nm by Scherrer equation. PL emission of YPO4:Pr3+ with a different content ratio of Pr6O11 by excitation λexc=250 nm shows that 0.75 mol% phosphor powder has maximum PL intensity and PL decreases with the increase of the ratio of Pr₆O₁₁ up to 1.25 mol% which is caused by changes of crystallinity of phosphor powders. With increasing dopant ratio, photoluminescence Emission decreases due to Concentration quenching, which is commonly observed in phosphors. Currently, 0.75 mol% is considered the optimal doping concentration. A hybrid ultraviolet-emitting device incorporating YPO4:Pr3+ fluorescent material with plasma discharge was fabricated to enhance UV germicidal effects while minimizing ozone generation. UV emission from the plasma discharge device was shown at about 200 nm and 350 nm which caused additional emission of the regions of 250 nm, 315 nm, and 370 nm from the YPO₄:Pr³⁺ phosphor.

Recently, as interest in personal hygiene has increased due to the community spread of COVID-19 and variant viruses, fixed and potable UV germicidal equipment to sterilize indoor spaces and hand-held UV germicidal equipment to sterilize household items such as masks and mobile phones are continuously being developed and sold. However, the development and sales of the product are difficult because appropriate testing methods have not yet been established. In this situation, if an uncertified product is distributed in the market, it can cause serious harm to consumers. In this study, we investigate the photobiological risks and safety devices against UV exposure of UV germicidal equipment distributed domestically, and propose appropriate test methods for portable UV germicidal equipment based on the research results.