Abstract: This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at 120℃ using single-precursor hexamethyildisilane: Si(2)(CH(3))(6) (HMDS) as Si and C precursors. 0～40 sccm N(2) gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/cm(2), respectively. The thermal and mechanical properties of the N(2) doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of N(2) flow rate. Maximum young`s modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm N(2), respectively.