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"Proton"

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"Proton"

Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology
Sung Hoon Jung, Yong Hyun Lee, Jae Sung Lee, Young Kyu Kwon, Young Ho Bae
J Korean Inst Electr Electron Mater Eng 2009;22(9):732-736.   Published online September 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.9.732
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improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation
J Korean Inst Electr Electron Mater Eng 2006;19(12):1073-1077.   Published online December 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.12.1073

Citations

Citations to this article as recorded by  
  • Status of and prospects for proton beam utilization at the KOMAC
    Kye-Ryung Kim
    Journal of the Korean Physical Society.2015; 66(3): 491.     CrossRef
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  • 1 Crossref
Switching Characteristics Enhancement of PT Type Power Diode using Proton Irradiation Technique
J Korean Inst Electr Electron Mater Eng 2006;19(3):216-221.   Published online March 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.3.216

Citations

Citations to this article as recorded by  
  • Status of and prospects for proton beam utilization at the KOMAC
    Kye-Ryung Kim
    Journal of the Korean Physical Society.2015; 66(3): 491.     CrossRef
  • 52 View
  • 0 Download
  • 1 Crossref
Current-voltage Characteristics of Proton Irradiated NPT Type Power Diode
J Korean Inst Electr Electron Mater Eng 2006;19(1):7-12.   Published online January 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.1.007
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Fabrication of Ultra Fast Recovery Diodes using Proton Irradiation Technique
J Korean Inst Electr Electron Mater Eng 2004;17(12):1308-1313.   Published online December 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.12.1308
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Fabrication of a Fast Switching Thyristor by Proton Irradiation Method
J Korean Inst Electr Electron Mater Eng 2004;17(12):1264-1270.   Published online December 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.12.1264
  • 35 View
  • 1 Download