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Pseudo MOSFET 기술에 의한 양성자 조사 SOI 웨이퍼의 캐리어 수명 분석

정성훈, 이용헌, 이재성, 권영규, 배영호

Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology

Sung Hoon Jung, Yong Hyun Lee, Jae Sung Lee, Young Kyu Kwon, Young Ho Bae
J Korean Inst Electr Electron Mater Eng 2009;22(9):732-736.
Published online: September 1, 2009
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Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology
J Korean Inst Electr Electron Mater Eng. 2009;22(9):732-736.   Published online September 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.9.732
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology
J Korean Inst Electr Electron Mater Eng. 2009;22(9):732-736.   Published online September 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.9.732
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