Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

Pseudo MOSFET 기술에 의한 양성자 조사 SOI 웨이퍼의 캐리어 수명 분석

정성훈, 이용헌, 이재성, 권영규, 배영호

Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology

Sung Hoon Jung, Yong Hyun Lee, Jae Sung Lee, Young Kyu Kwon, Young Ho Bae
J Electr Electron Mater 2009;22(9):732-736.
Published online: September 1, 2009
  • 9 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology
J Electr Electron Mater. 2009;22(9):732-736.   Published online September 1, 2009
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Carrier Lifetime Analysis of Proton Irradiated SOI Wafer with Pseudo MOSFET Technology
J Electr Electron Mater. 2009;22(9):732-736.   Published online September 1, 2009
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.