In this study, Y₂O₃ thin films were deposited on Si(100) wafers using an RF sputtering system with a Y₂O₃ target. The Y₂O₃ thin film was confirmed to have a thickness of 227 nm/min and a uniformity of 1.34% at a substrate temperature of 400℃. All samples were annealed at 600, 800, and 1,000℃ for 1 hour in an O₂ gas atmosphere using the furnace. The analysis of the XRD patterns revealed that the peak intensity increased with annealing up to 800℃, but decreased when the annealing temperature was raised to 1,000℃. The XPS analysis confirmed the onset of crystallization at 800℃, in agreement with the trends observed in the XRD results. According to the AFM results, the surface became slightly smoother after heat treatment, as indicated by a reduced RMS roughness of approximately 1.792 nm.

Molybdenum disulfide (MoS₂) is a promising 2D semiconductor material for low-power electronics due to its excellent electrical properties and compatibility with conventional processes. In this study, MoS₂ thin films deposited by RF sputtering were etched using Cl₂/Ar plasma in an ICP system. The effects of Cl₂ gas ratio, RF power, and process pressure on etch rate and MoS₂/SiO₂ selectivity were investigated. Optimal results were obtained at 25% Cl₂, achieving ~38 nm/min etch rate and selectivity of 3.0. Increased source power improved both etch rate and selectivity, while higher bias power enhanced etching but reduced selectivity due to stronger ion bombardment. XPS analysis confirmed Mo－Cl and S－Cl bond formation after etching, indicating chemical reactions and some by-product residue. These results provide insights into optimized plasma etching of sputtered MoS₂ films for advanced 2D device fabrication

In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm2/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current (I_on) and field effect mobility (μFE) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

Thin films of cubic Na0.6WO3, which is one of the sodium tungsten bronze, were fabricated byrf sputtering for the electrode applications in integrated sensors and actuators. A single-phase cubicNa0.6WO3 sputtering target of power type was prepared by conventional solid-state reaction. Thin filmswere deposited from the powder target, and the as-deposited films were amorphous, thus they annealedby tube furnace or RTP for crystallization. Thin films having cubic phase NaxWO3 were fabricated by theoptimization of sputtering and post-annealing conditions, but single-phase cubic Na0.6WO3 thin films werenot obtained. Although the films were not in single phase, they had good electrical conduction propertiesshowing electrical resistivities of 10-4 Ω·cm order.

The powders for the NaxWO3 (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase NaWO3 and single-phase Na0.75WO3 powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the SiO2 (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the NaWO3 composition, single-phase NaxWO3 thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the Na0.75WO3 thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that NaxWO3 with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase NaxWO3 thin films. Their electrical resistivities were as low as 7.5 × 10-4 Ω·cm.

In this study, we use the 2.5 cm × 7.5 cm soda lime glass as the substrate. We used the ultrasonicator. Glass was dipped in the acetone, methanol and DI water respectively for 10 minutes. Ar(99.99%)gas was used as the sputtering gas. We varied the RF power between 100∼175 W with 25 W steps. Base pressure was kept by turbo molecular pump at 3.0×10-6 torr. Working pressure was kept by injection of Ar gas. ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the RF power. Electrical properties were measured by hall effect methods at room temperature. The resistivity, carrier concentration, and hall mobility of ZnS deposited on glass substrate as a function of sputtering power. It can be seen that as the sputtering power increase from 100 to 175 W, the resistivity of the films on glass decreased significantly from 8.1×10-2 to 1.2×10-3 Ω?㎝. This behavior could be explained by the effect of the sputtering power on the mobility and carrier concentration. When the RF power increases, the carrier concentration increases slightly while the resistivity decreases significantly. These variation originate from improved crystallinity and enhanced substitutional doping as the sputtering power increases.

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300∼800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

Conductive SrMoO3 thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of SrMoO3 and SrMoO4, but SrMoO3 phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate O2 gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of SrMoO3 was obtained, and it showed good electrical conduction properties with a low resistivity of 2.5×10(-3)Ω·cm at room temperature.

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)O3 (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.

Single-phase Sr2FeMoO6 thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of O2 gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the Sr2FeMoO6 phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase Sr2FeMoO6: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of 1.6×10(-2)Ω·cm at room temperature.