Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25∼75% N2/Aratmosphere. The as-deposited AlN films at 25∼50% N2/Ar showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the N2/Ar ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our N2 concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20∼80 mV in 1∼10MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.
Temperature Effect on Dielectric and Impedance Spectroscopy Studies of MnxZn1−xFe2O4 (x = 0.35, 0.50, 0.65) Ferrite Nanoparticles Synthesized by Sol-Gel Method Suneetha T., T. K. Nath ECS Journal of Solid State Science and Technology.2025; 14(8): 083007. CrossRef
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