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반응성 스퍼터링법으로 Al/AIN/GaAs 커패시터 제조시 (NH4)2S 처리에 따른 전기적 특성

추순남, 권정열, 박정철, 이헌용

Electrical Characteristic of Al/AIN/GaAs MIS Capacitor Fabricated by Reactive Sputtering Method for the (NH4)2S Treatment

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J Electr Electron Mater 2007;20(1):8-13.
Published online: January 1, 2007
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Electrical Characteristic of Al/AIN/GaAs MIS Capacitor Fabricated by Reactive Sputtering Method for the (NH4)2S Treatment
J Electr Electron Mater. 2007;20(1):8-13.   Published online January 1, 2007
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Electrical Characteristic of Al/AIN/GaAs MIS Capacitor Fabricated by Reactive Sputtering Method for the (NH4)2S Treatment
J Electr Electron Mater. 2007;20(1):8-13.   Published online January 1, 2007
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