This study investigates the effects of chemical etching for anti-glare (AG) treatment and the subsequent deposition of a TiZrO₂/SiO₂ double-layer anti-reflection (AR) coating on glass surfaces. The AG treatment was performed using ammonium fluoride in gel form via screen printing, followed by electron beam deposition of SiO₂/TiZrO₂ layers. The surface roughness, optical transmittance, and refractive index were analyzed. The results revealed that while the surface roughness increased with larger screen patterns during the AG treatment, it was reduced by the deposition of the AR layers. Additionally, the gloss caused by external light was higher with lower surface roughness, but it was effectively reduced by the AR coating. The optical reflectance showed minimal changes during the AG treatment, remaining similar to that of bare glass substrates. However, the AR coating significantly decreased reflectance. The combination of AG treatment and AR coating improved optical transmittance and reduced gloss, making this method beneficial for enhancing visibility in automotive displays. The findings suggest that this approach can mitigate the impact of external light and improve the clarity of displayed information, making it suitable for automotive display applications.

In this study, oxide/metal/oxide-type transparent electrodes based on Al and ZnO were investigated. Thin films of these materials were sputter-deposited at room temperature. To evaluate the thickness dependence of the oxide layers, the top and bottom ZnO layers were varied in the range of 5~80 nm and 2.5~20 nm, respectively. When the thicknesses of the top and bottom ZnO layers were fixed at 30 nm and 2.5 nm, a maximum transmitance of 66% and sheet resistance of 16.5 Ω/□ were achieved, which is significantly improved compared with the Al layer without top and bottom ZnO layers showing a maximum transmitance of 44.3% and sheet resistance of 44 Ω/□.

In this study, 20.8% of a p-type Si bifacial solar cell was used to develop a photovoltaic (PV) module to obtain the maximum power under a limited installation area. The transparent back sheet material was replaced during fabrication with a white one, which is opaque in commercial products. This is very beneficial for the generation of more electricity, owing to the additional power generation via absorption of light from the rear side. A new model is suggested herein to predict the power of the bifacial PV module by considering the backside reflections from the roof and/or environment. This model considers not only the frontside reflection, but also the nonuniformity of the backside light sources. Theoretical predictions were compared to experimental data to prove the validity of this model, the error range for which ranged from 0.32% to 8.49%. Especially, under 700 W/m2, the error rate was as low as 2.25%. This work could provide theoretical and experimental bases for application to a distributed and microgrid network.

We fabricated 1-D and 2-D diffraction gratings of SiOx anti-reflection (AR) film grown on a quartz substrate and integrated them into a c-Si photovoltaic (PV) submodule. The light-trapping effect of the resulting submodules was studied in terms of the oblique optical incident angle, θ_i. As the θ_i increased, solar conversion efficiency, η, was improved as expected by the increased optical transmission caused by the grating. For θ_i≤30°, the relative solar conversion efficiency, Δη, of a 1-D SiOx (t=300 nm) grating, compared to that of a flat SiOx AR-coated integrated PV submodule, was improved very little, with a small variation of within 2%, but increased markedly for θ_i≥40°. We observed a change of Δη as large as 10.7% and 9.5% for the SiOx grating of period t=800 nm and 1200 nm, respectively. For a 2-D SiOx (t=300 nm) grating integrated PV submodule, however, the optical trapping behavior was similar in terms of θ_i but its variation was small, within ±1.0%.

DSSCs (dye-sensitized solar cells) based on TiO₂/SiO₂ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

In this paper, the growing orientation of PMN-PT single crystal is analyzed using the Laue-Back Reflection Method. Two kinds of PMN-PT single crystals are grown using the Bridgman growing method in the [001] and [111] directions and their the Laue photographs are simulated assuming cubic crystal systems. From the comparison between simulation and test results, it can be concluded that the single crystals are grown in the desired crystal orientations.

Anti-reflective (AR) thin film was fabricated on a glass substrate by sol-gel method. The coating solution was synthesized with TEOS (tetraethlyorthosilicate) and poly ethylene glycol (PEG, 4.0 wt%). As the withdrawal speed of coating was changed from 0.1 mm/sec to 0.3 mm/sec, the thickness and refractive index of prepared thin films were changed. The reflectance and transmittance of coating glass fabricated by the withdrawal speed of 0.1 mm/sec were 0.62% and 95.0% in visible light range. The refractive index and thickness of single layer thin film were n= 1.29 and ca. 99.0 nm.

Efficiency of crystalline Si solar cell can be maximized as minimizing optical loss through antireflection texturing with inverted pyramids. Even if cost-competitive, soft lithography can be employed instead of photolithography for the purpose, some limitations still remain to apply the soft lithography directly to as-received solar grade wafer with a bunch of micro trenches on surface. Therefore, it is needed to develop a low-cost, effective planarization process and evaluate its output to be applicable to patterning process with PDMS stamp. In this study new surface planarization process is proposed and the change of micro scale trenches on the surface as a function of etching time is observed. Also, the effect of trenches on pattern quality by soft lithography is investigated using FEM structural analysis. In conclusion it is clear that the geometry and shape of trenches would be basic considerations for soft lithography application to low quality wafer.

In this paper, we studied the magnetic composite sheets for electromagnetic wave noise absorber of quasi-microwave band by using soft magnetic FeSiCr and Fe50Ni flakes with the thickness of about 1 μm and polymer. The magnetic hysteresis curve including saturation magnetization and residual magnetization and the complex permeability characteristics of the composite sheets were investigated to clarify the mixing effect on electromagnetic wave absorption properties. The saturation magnetization was decreased about 10% while the residual magnetization was increased about 15% and the real parts of complex permeability at below 500 MHz were increased 0.6～4 while those values at above 500 MHz were decreased 0.4～2.5 according to the change of contents of FeSiCr and Fe50Nipowders. As a result, the reflection loss can be moved to the lower frequency from 2∼3 GHz to 1∼1.5GHz as the contents of Fe50Ni flaky powder into FeSiCr flaky powder was increased up to 50%.

In this paper, we have researched semiconductor optical filters to solve the problem of the high failure rate that are recognize bad of financial account, jam of financial account and the ATM service interruption due to failure of accurate location information among the operation of the ATM (automatic teller machine) systems. A semiconductor optical filters that have high resolution and less diffuse, high transmittance are able to detect the information of financial account surface accurately. Therefore, it is a stable filter that is able to minimize the incidence of disability. In this paper, we drew the determinants by element for implement an excellent semiconductor optical filters. Based on this, we had to be able to implement the semiconductor optical filter that is able to be mounted on the actual ATM system through future studies.

Crystalline silicon solar cells with SiNx/SiNx and SiNx/SiOx double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of SiNx and SiOx layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9∼2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of 1,370 ㎛. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300∼1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with SiNx single layer. With the completed solar cell with SiNx/SiNx of n= 2.2/1.9 and SiNx/SiOx of n= 2.2/1.46, the electrical characteristics was improved as ΔVoc= 3.7 mV, ΔJsc= 0.11 mA/cm2 and Δ Voc= 5.2 mV, ΔJsc= 0.23 mA/cm2, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

The optical losses associated with the reflectance of incident radiation are among the most important factors limiting the efficiency of a solar cell. Therefore, photovoltaic cells normally require special surface structures or materials, which can reduce reflectance. In this study, nano-scale textured structures with anti-reflection properties were successfully formed on silicon. The surface of sicon wafer was etched by the inductively coupled plasma process using the gaseous mixture of SF6+O2. We demonstrate that the reflection characteristic has significantly reduced by ∼0% compared with the flat surface. As a result, the power efficiency Pmax of the nano-scale textured silicon solar cell were enhanced up to 20%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

This paper describes the characteristics of electromagnetic wave propagation wave propagation in power transformer. A transformer which is similar which is similar to 154 kV single phase on-site transformer unit was provided for the purpose of the experiment. The 12dieletric windows on the transformer enclosure to install UHF(ultra high frequency) sensors and the full scale mock ups of winding and the core were also euipped in the transformer. Every sensors to be installed to the transformer was tested and verified whether they show same characteristics or not beforethe experiment. A discharge gap which was used as a PD (partial discharge) source moved to or not before the experiment. A discharge gap which was used as a PD (partial discharge) source moved to several necessary locations in the transformer to simulate dielectrie defects. Propagation times of electromagnetic wave signal from PD source to sensors decided by the routes of both reflection phenomenon and diffraction phenomenon were compared each other. The experimental results showed propagation route of the PD signal makes an effect on the frequency spectrum of front part of the signal and the magnitude of the signal and propagation time of the signal when the signal is captured on the sensor