The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO₂, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.

A carbon-based hybrid resistor was fabricated using carbon nanotube (CNT) paste as an adhesive layer to establish electrically continuous ohmic contacts between CNT sheets and different CNT sheet or copper based metal alloy plates, and its electrical properties were evaluated. CNT sheets were fabricated using vacuum filtration with a CNT solution dispersed in isopropyl alcohol (IPA) solvent. The electrical characteristics of these carbon-based hybrid resistors were investigated.The CNT paste fulfilled the requirements for forming ohmic contacts between CNT sheets and metal alloy plates, which was attributed to the lowest work function difference and excellent wettability at the interface.

We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

We prepared yarned carbon nanotube (CNT) fibers from a CNT forest synthesized on a Si wafer by chemical vapor deposition (CVD). The yarned CNT fibers were thermally annealed to reduce their resistance by removing the amorphous carbonaceous impurities present in the fibers. The resistance of the yarned CNT fiber gradually decreased with an increase in the annealing temperature from 200℃ to 400℃ but increased again above 450℃. We carried out thermogravimetric analysis (TGA) to confirm the burning properties of the amorphous carbonaceous impurities and the crystalline CNTs present in the fibers. The pattern of the mass change of the sample CNT fibers was very similar to that of the resistance change. We conclude that CNT fibers should be thermally annealed at temperatures below 400℃ for reducing and stabilizing their resistance.

In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around 800 ppm/℃ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around -800 ppm/℃ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about 46.93 ppm/℃ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.

In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and 10 Ω and different TCRs, 50 and 200 ppm/℃. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors’ electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.

In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.

In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (±1% of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at 60℃); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at 25℃). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

Fe₂O₃ is one of the most important metal oxides for gas sensing applications because of its low cost and high stability. It is well-known that the shape, size, and phase of Fe₂O₃ have a significant influence on its sensing properties. Many reports are available in the literature on the use of Fe₂O₃-based sensors for detecting gases, such as NO₂, NH₃, H₂S, H₂, and CO. In this paper, we investigated the gas-sensing performance of a Pt-doped ε-phase Fe₂O₃ gas sensor. Pt-doped Fe₂O₃ nanoparticles were synthesized by a Sol-Gel method. Platinum, known as a catalytic material, was used for improving gas-sensing performance in this research. The gas-response measurement at 300℃ showed that Fe₂O₃ gas sensors doped with 3%Pt are selective for NO₂ gas and exhibita maximum response of 21.23%. The gas-sensing properties proved that Fe₂O₃ could be used as a gas sensor for nitrogen dioxide.

CNT (carbon nanotube) resistors with low resistance and negative TCR (temperature coefficient of resistance) were fabricated with yarned CNT (carbon nanotube) fibers. The CNT fibers were prepared by yarning CNTs grown on the silicone substrate by CVD (chemical vapor deposition) method. The CNT resistors were fabricated by winding CNT fibers on the surface of ceramic rod. Both metal terminals were connected with the CNT fiber wound on the ceramic rod. We measured electrical resistance and thermal stability with the number of CNT fibers wound. The CNT resistor system shows linearly decreased resistance with the number of CNTs wound on the ceramic rod and saturated at 20 strands. The CNT resistor system has negative TCR between -1,000 ~ -2,000 ppm/℃ and stable frequency properties under 100 kHz.

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below 10 mΩ and low temperature coefficient of resistance (TCR) below 100 ppm/℃ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without Bi2O3) and HBF-B(with Bi2O3) were made from SiO2, B2O3, Al2O3, CaO, MgO, Na2O, K2O, ZnO, MnO, ZrO2, Bi2O3. And Ag based conductor pastes and RuO2 based resistor paste were prepared by mixed with these frits and functional phase(Ag and RuO2), and organic vehicle. The properties of thick film conductor and resistor sintered at 850℃ were studied after printing on Al2O3 substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.