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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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"SBR"

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"SBR"

A Study on the Fabrication of Multi-Walled Nanotubes (MWCNT) Based Thin Film and Chemical Sensor Operation Characteristics
Jae Ha Noh, Junseck Choi, Dongwan Ko, Joonyoung Seo, Sangtae Lee, Jung-yeul Jung, Jiho Chang
J Electr Electron Mater 2020;33(3):181-185.   Published online May 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.3.5
Hazardous and noxious substance (HNS) detection sensors were fabricated using multi-walled carbon nanotubes (MWCNTs) and various binder materials for ion batteries. To obtain uniformly printed films, the printing precision according to the substrate cleaning method was monitored, and the printing paste mixing ratio was investigated. Binders were prepared using styrene butadiene rubber + carboxymethyl cellulose (SBR+CMC), polyvinylidene fluoride + n-methyl-2-pyrrolidene (PVDF+NMP), and mixed with MWCNTs. The surface morphology of the printed films was examined using an optical microscope and a scanning electron microscope, and their electrical properties are investigated using an I-V sourcemeter. Finally, sensing properties of MWCNT printed films were measured according to changes in the concentration of the chemical under the various applied voltages. In conclusion, the MWCNT printed films made of (SBR+CMC) were found to be feasible for application to the detection of hazardous and noxious chemicals spilled in seawater.
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A Study on High Performance Lateral Super Barrier Rectifier for Integration in BCD (Bipolar CMOS DMOS) Platform
Duck Soo Kim, Hi Deok Lee
J Electr Electron Mater 2015;28(6):371-374.   Published online June 1, 2015
This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, VF = 0.38 V @ IF = 35 mA, T_j = 150℃ were obtained with very low leakage current characteristic of 3.25 uA
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