The safety and stability concerns of liquid electrolytes in conventional lithium-ion batteries have accelerated the development of solid-state alternatives. NASICON type ceramics Li_1.5Al_0.5Ti_1.5(PO₄)₃ (LATP) offer promising properties, including high bulk ionic conductivity and good compatibility with lithium anodes. However, their practical application is hindered by grain boundary resistance and relatively low total ionic conductivity. This study investigates the effect of Ta₂O₅ doping on LATP to overcome these limitations. Doping with 5 wt% Ta₂O₅ improved the ionic conductivity to 2.95 × 10-4 S/cm by enhancing lattice structure, reducing grain boundary resistance, and suppressing the formation of secondary phase. Additionally, Ta₂O₅ positively influenced the sintering behavior, resulting in a denser, and more uniform microstructure. These enhancements suggest that Ta₂O₅-doped LATP is a strong candidate for next-generation all-solid-state lithium-ion batteries.

MBB (multi-busbar) technology is a module technology to achieve high power, and the use of a number of thin circular metal wires increases light-receiving capacity and reduces resistance. In the process of interconnection using a wire, the stress of the cell increases depending on the degree of coupling between the wire and the cell and the degree of damage caused by heat, or the mobility of current decreases due to poor bonding. The degree of such loss is affected by IR lamp, hot plate temperature and wire thickness. In addition, the values of contact resistance were compared and analyzed to analyze the cause of the decrease in electrical characteristics. In this study, process condition optimization was carried out through peeling test, SEM analysis, EL test, and pre/post bonding efficiency characteristic analysis of the bonded cell according to process conditions, compared the contact resistance.

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (Rs) in the nonlinear section extracted using Cheung’s formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

To evaluate the possibility as a multi-level memory medium for the Ge2Sb2Te5/TiN/W-doped Ge2Sb2Te5 cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge2Sb2Te5 and W-doped Ge2Sb2Te5 thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto- multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·㎠, resulting in the highest Baliga’s figure-of-merit (BFOM) of 92.0 MW/㎠. We also investigated the effect of dielectric thickness and field plate length on BV.

In the past, the efficiency of solar cells had been increased in order to increase the efficiency of solar modules. However, in recent years, in order to increase output in the solar industry and market, the competitiveness of solar cells based on large-area solar cells and multi-bus bar has been increasing. Multi-busbar solar module is a technology to reduce power loss by increasing the number and width of the front busbar of the solar cell and reducing the current value delivered by the busbar by half through half-cutting. In the case of the existing M2 (156.75×156.75 ㎟) solar cell, even with a half-cut, power loss could be sufficiently reduced, but as the area of the solar cell is enlarged to more than M6 (166×166 ㎟), the need for more divisions emerged. This affected not only solar cells but also inverters required for module array configuration. Therefore, in this study, the electrical characteristics of a large-area solar cell and after division were extracted using Griddler simulation. The output characteristics of the module were predicted by applying the solar cell parameters after division to PSPice, and a guideline for the large-area solar module design was presented according to the number of divisions of the large-area solar cell.

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/WGe₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

Hazardous and noxious substance (HNS) detection sensors were fabricated using multi-walled carbon nanotubes (MWCNTs) and various binder materials for ion batteries. To obtain uniformly printed films, the printing precision according to the substrate cleaning method was monitored, and the printing paste mixing ratio was investigated. Binders were prepared using styrene butadiene rubber + carboxymethyl cellulose (SBR+CMC), polyvinylidene fluoride + n-methyl-2-pyrrolidene (PVDF+NMP), and mixed with MWCNTs. The surface morphology of the printed films was examined using an optical microscope and a scanning electron microscope, and their electrical properties are investigated using an I-V sourcemeter. Finally, sensing properties of MWCNT printed films were measured according to changes in the concentration of the chemical under the various applied voltages. In conclusion, the MWCNT printed films made of (SBR+CMC) were found to be feasible for application to the detection of hazardous and noxious chemicals spilled in seawater.

In this study, to develop angle ring pressboards for high voltage transformers, the radius and thickness are modified under the conditions of temperature and humidity. In particular, a pressboard with a thickness of 6 mm and a radius at the angled part were investigated based on the simulation of the principal stress from the angled optimization profile shape. As a result, by the appropriate application of a higher temperature, the solid insulation can be improved to reduce the moisture content for an optimized profile angle of a high voltage transformer. This also results in the improvement of the safety factor by 25%. It is determined that the electrical insulation properties of pressboards in high voltage transformers can be enhanced by improving their properties.

In this study, we investigate the effect of an Sb-deficiency on the thermoelectric properties of double-filled n-type skutterudite (In_0.05Yb_0.15Co₄Sb_12-x). Samples were prepared by encapsulated induction melting, consecutive long-time annealing, and finally spark plasma sintering processes. The Sb-deficient sample contained a CoSb₂ secondary phase. Both the double-filled n-type skutterudite pristine and Sb-deficient samples showed metallic behavior in electrical conductivity with increasing temperature. The carrier concentration of the Sb-deficient sample decreased compared with that of the pristine sample. Due to a decrease in carrier concentration, the Sb deficient sample showed decreased electrical conductivity and an increased Seebeck coefficient compared with the conductivity and coefficient of the pristine sample. Furthermore, the Sb deficient sample showed an increase in the power factor (σ·S²); the power factor maximum shifted to athe lower temperature side than ones of the pristine sample. As a result, the Sb-deficient sample represents an improved average figure of merit (ZT) and a ZT_max temperature lower than that of the pristine sample. Therefore, we propose that Sb-deficient double-filled n-type skutterudite thermoelectric material (In_0.05Yb_0.15Co₄Sb_12-x) be used in the 573~673 K temperature range.

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, R_on, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

Fe₃O₄ was prepared on the TiO₂-coated natural mica substrate. The natural mica has an average particle size of 22 ㎛. The substrate was coated on TiO₂ thin films using hydrothermal synthesis at pH 1.5-2.5 at 75℃. The Fe precursor solution was prepared by mixing FeSO₄ (for Fe²⁺ ion) and FeCl₃ (for Fe³⁺ ions) with different molar ratios such as 1/2, 1/1, 2/1, 3/0, and Fe₃O₄ only. X-ray diffraction analysis shows that the crystal structure depends on the FeCl₃-to-FeSO₄ molar ratio. Fe₃O₄ crystal phase could be obtained at higher FeSO₄ contents.

We evaluated the structural, electrical and optical properties of tungsten (W)-doped Ge₈Sb₂Te₁₁ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick Ge₈Sb₂Te₁₁ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the 0~400℃ temperature range. The structural properties were analyzed using X-ray diffraction (X`pert PRO, Phillips). The results showed increased crystallization temperature (T_c) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap (E_op) and an increase in the Eop difference (△E_op). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance (R_s), which reduces programming current in the memory device.

This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from 100℃ to 400℃. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at 400℃, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of 300℃ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.

Some insulating materials are tested and analyzed with variables to obtain the reliable pressboard which is located to core and coil of high voltage transformer. The high voltage transformer is used in electrical power system and operating reliability. Optimization possibility of pressboard shape including electrical insulation performance could be achieved by analysis simulation. Using insulating pressboard, which is made by mold applied eddy current loss, it could be measured the influences of moisture content for electrical properties. As a result, it is to contribute to improve the performance and ensure the reliability of the pressboard by investigating electrical strength according to the variation oil temperature. In addition pressboard thickness is important design factor to ensure electrical strength in high voltage transformer.

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, VF = 0.38 V @ IF = 35 mA, T_j = 150℃ were obtained with very low leakage current characteristic of 3.25 uA

The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of Ge19Sb23Se58. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.

Lead-free piezoelectric ceramics with the composition of (Na0.54K0.46)0.96Li0.04(Nb1-0.10-xTa0.10Sbx)O3 (x= 0∼8 mol%) were fabricated by nomal sintering at 1,090℃ for 5 h. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the Sb content. All samples exhibit a single perovskite phase over the whole compositional range. For the ceramics with x= 4 [mol%], two phase transitions are observed at 75℃ and 366℃, corresponding to the phase transitions of orthorhombic to tetragonal (To-t) and tetragonal to cubic (Tc), respectively. high electrical properties of d33= 210.83 pC/N, kp= 40%, εr= 1,091.35, ρ= 4.54 g/㎠ were obtained from the specimen with x= 4 [mol%], which suggests that the composition ceramics is a promising lead-free piezoelectric material.

An amorphous Ge2Sb2Te5 thin film is one of the most commonly used materials for phase-change data storage. In this study, Aux(Ge2Sb2Te5)1-x thin film amorphous-to-crystalline phase-change rate were evaluated in using 658 nm laser beam. The focused laser beam with a diameter <10 μm was illuminated in the power (P) and pulse duration (t) ranges of 1-17 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the Ge2Sb2Te5 film is largely improved by adding Au.

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to 450℃. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569∼0.631 eV and work function of 4.699∼4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

Optical gain characteristics of 1.3 ㎛ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than 1.3 ㎛ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.