For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk,Si3N4/Si, and Al/Si samples are used and observed the shapes milled from different sputtering rates,incident angles of Ga+ ions bombardment, beam current, and target material. These conditions also can beinfluenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions ofFIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damagedlayers caused by bombarding of Ga+ ions were observed on the surface of target materials. The simulatedresults were shown a little bit deviation with the experimental data due to relatively small sputtering rateon the sample surface. The simulation results showed about 10.6% tolerance from the measured data at200 pA. On the other hand, the improved analytical model of damaged layer was matched well withexperimental XTEM (cross-sectional transmission electron microscopy) data.

Abstract: The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to 800℃. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.