A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Sisubstrate. The (111) N-type Si wafers with one-side polished, 450∼500 ㎛ and resistivity 1∼20 Ω·㎝were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design wouldprovide an effective scheme for high-performing photoelectric devices.

A high-responsive Schottky device has been achieved by forming a thin metal deposition on aSi substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thicknessabout 10 nm. The barrier height formation between metal and Si determines the rectifying currentprofiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of900 nm. An efficient design of Schottky device may applied for photoelectric devices, includingphotodetectors and solar cells.