There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During O2 plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

SnO₂/Ag/Nb₂O₅/SiO₂/SnO₂ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top SnO₂ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top SnO₂ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to 6.94 Ω/sq. The Haacke`s figure of merit (FOM) calculated for the samples with various SnO₂ layer thicknesses was a maximum at 45 nm (35.3 × 10^-3 Ω^-1).

In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs)was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for thereduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the resultsshowed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of powerconversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by usingelectrochemical impedance analyzer (EIS).

In this paper, CuInSe2 thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of 100℃ to 400℃. The film was annealed at 300℃ for an hour in a vacuum chamber at 3×10-4 Pa. After annealing, the thin film prepared at the substrate temperatures of 100℃ and 200℃ was observed. The XRD (x-ray diffraction) pattern of sample prepared at 100℃ showed the single phase formation of CuInSe2. However, at 200℃, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at 200℃ and 300℃, the sheet resistance was 1.534 n/and 1.554 n/, respectively, and the resistivity was 1.76×10-6 n·㎝ and 1.7210-6 n·㎝, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.