There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During O2 plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.