TeO_x thin films were deposited at various O₂/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from TeO₂ and Te targets. X-ray diffraction (XRD) results revealed that the TeO_x thin films were amorphous. The structure and chemical composition of the TeO_x thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the TeO_x thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the O₂/Ar gas-flow ratios, the atomic composition ratio of TeO_x thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing O₂/Ar gas-flow ratio, the refractive index of the TeO_x thin films decreased and the optical bandgap of the films increased.

One-dimensional (1D) photonic crystals (PCs) were prepared by TeOx(2＜x＜3)/SiO2 with thedifference refractive index, and fabricated by sputtering technique from a TeO2 and SiO2 target. TheTeOx(2＜x＜3) layers were fabricated by using the sputtering gas ratio (Ar:O2=40:10). A 10-pair TeOx(2＜x＜3)/SiO2 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. Anormal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. Themeasured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laserexposure, the defect level is shifted from 1,291 nm to 1,304 nm.