Journal of Electrical and Electronic Materials

"Transconductance"

Macro Model of DWFG MOSFET for Analog Application and Design of Operational Amplifier: Ji Hoon Ha, Ki Ju Baek, Dae Hwan Lee, Kee Yeol Na, Yeong Seuk Kim; J Korean Inst Electr Electron Mater Eng 2013;26(8):582-586. Published online August 1, 2013; DOI: https://doi.org/10.4313/JKEM.2013.26.8.582

Abstract
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In this paper, a simple macro model of n-channel MOSFET with dual workfunction gate (DWFG) structure is proposed. The DWFG MOSFET has higher transconductance and lower drain conductance than conventional MOSFET. Thus analog circuit design using the DWFG MOSFET can improve circuit characteristics. Currently, device models of the DWFG MOSFET are insufficient, so simple series connected two MOSFET model is proposed. In addition, a two stage operational amplifier using the proposed DWFG MOSFET macro model is designed to verify the model.

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Simulated DC Charceristics of AlGaN HEMTs with Trench Shapped Source, Dracin Strucures: Kang Min Jung, Young Soo Lee, Su Jin Kim, Dong Ho Kim, Jae Moo Kim, Hong Goo Choi, Cheol Koo Hahn, Tae Geun Kim; J Korean Inst Electr Electron Mater Eng 2008;21(10):885-888. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.885

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