Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Page Path

2
results for

"Wave length"

Keywords

Publication year

Authors

"Wave length"

Study on the MTTF of Multi Wave Lengths IR and NIR LEDs Module
Dong Pyo Kim, Kyung Seob Kim
J Electr Electron Mater 2021;34(1):44-49.   Published online January 1, 2021
DOI: https://doi.org/10.4313/JKEM.2021.34.1.8
Recently, infrared (IR) and near-infrared (NIR) light-emitting diodes (LEDs) were widely used for home medical applications owing to its low output power and wide exposed area for curing. For deep penetration of the light under the skin, multiple LEDs with wavelengths of 700~10,000 nm were located on a flexible printed circuit board. When multiple wavelengths of LEDs were soldered on a circuit board, the lifetime of LED module highly depends on LEDs with a short lifetime. The mean time to failure (MTTF) was able to calculate with the experimental results under high temperature and the Arrhenius model. The results of this study could help companies to approve the warranty of LED modules and its product.
  • 10 View
  • 0 Download
High Voltage and Discharge Engineering : The Characteristics of Multi-layer Structure LED with MgxZn1-xO Thin Films
Ji Hoon Son, Sang Hyun Kim, Na Kwon Jang, Hong Seong Kim
J Electr Electron Mater 2012;25(10):811-816.   Published online October 1, 2012
The effect of co-sputtering condition on the structural properties of MgxZn1-xO thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. MgxZn1-xO thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the MgxZn1-xO film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/Al2O3 substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.
  • 6 View
  • 0 Download