Hydrothermal synthesis technique could be carried out for growth of ZnO nanowires atrelatively low process temperature, and it could be freely utilized with various substrates for fabricationprocess of functional electronic devices. However, it has also a demerit of relatively slow growthcharacteristics of the resulting ZnO nanowires. In this paper, an external DC bias of positive and negative0.5 [V] was applied in the hydrothermal synthesis process for 2∼8 [h] to prepare ZnO nanowires on aseed layer of AZO with high electrical conductivity. Growth characteristics of the synthesized ZnOnanowires were analyzed by FE-SEM. Material property of the grown ZnO nanowires was examined byPL analysis. The ZnO nanowires grown with positive bias revealed distinctively enhanced growthcharacteristics, and they showed a typical material property of ZnO.

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a SiO2/Si substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.