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"ZrO2"

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"ZrO2"

Fabrication and Characterization of Alumina-TZP(3Y) Composite Ceramics
Jae Jung Yoon, Myung Pyo Chun, San Nahm
J Korean Inst Electr Electron Mater Eng 2015;28(3):170-174.   Published online March 1, 2015
DOI: https://doi.org/10.4313/JKEM.2015.28.3.170
Composite ceramics of alumina-TZP(3Y) have good mechanical and electrical properties. So, They have been used as high strength refractory materials and thick film substrates, etc. In this study, Composite ceramics of alumina-TZP(3Y) were fabricated by uniaxial pressing and sintering at 1,400, 1,500, and 1,600℃, and their microstructures and mechanical properties were investigated. As the TZP(3Y) content in composite ceramics increases from 20 wt.% to 80 wt.%, the fracture toughness increases monotonically, which seems to be related to the higher relative density and/or toughening mechanism by means of stabilized tetragonal zirconia phase at room temperature. In contrast to the fracture toughness, Vickers hardness of the composite ceramics shows maximum value (1,938 Hv) at a 40 wt.% of TZP(3Y). The result of Vickers hardness is likely to be due to more dense sintered microstructure of composite ceramics than pure alumina and reinforcement of composite ceramics with TZP(3Y), considering that Vickers hardness of pure Al2O3 is greater than that of TZP(3Y). It is also shown that the ZrO2 particles are 1°Cated between Al2O3 grains and suppress grain growth each other.
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Nonstoichiometric Addition of ZrO2 and NiO to the Ba(Zn1/3Ta2/3)O3 Microwave Dielectrics
Kyung Deog Nam, Sung Woo Kang, Tae Heui Kim, Soo Man Sim, Sun Hee Choi, Joo Sun Kim
J Korean Inst Electr Electron Mater Eng 2011;24(12):955-961.   Published online December 1, 2011
DOI: https://doi.org/10.4313/JKEM.2011.24.12.955
We investigated the physical properties of stoichiometric and non-stoichiometric oxide doped complex perovskite, Ba(Zn1/3Ta2/3)O3 ceramics and their impacts on the microwave dielectric performances using various characterization techniques such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and network analyzer. According to the measurement of lattice constant changes, anomalous lattice volume contraction of ZrO2 doped Ba(Zn1/3Ta2/3)O3 sample only showed the dielectric quality factor enhancements, which was due to the lattice volume contraction as well as the 1:2 B-site cation ordering. In addition, NiO doping was useful to the stabilization of temperature coefficient of resonance frequency.
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Study on Contact Resistance on the Performance of Oxide Thin Film Transistors
Jae Sang Lee, Sang Mo Koo, Sang Yeol Lee
J Korean Inst Electr Electron Mater Eng 2009;22(9):747-750.   Published online September 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.9.747
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Properties of ZrO2 Gas Barrier Film using Facing Target Sputtering System with Low Temperature Deposition Process for Flexible Displays
Ji Hwan Kim, Do Hyun Cho, Sun Young Sohn, Hwa Min Kim, Jong Jae Kim
J Korean Inst Electr Electron Mater Eng 2009;22(5):425-430.   Published online May 1, 2009
DOI: https://doi.org/10.4313/JKEM.2009.22.5.425
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Properly Comparison of Ru-Zr Alloy Metal Gate Electrode on ZrO2 and SiO2
J Korean Inst Electr Electron Mater Eng 2006;19(9):808-812.   Published online September 1, 2006
DOI: https://doi.org/10.4313/JKEM.2006.19.9.808
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Effect of ZrO2 Buffer Layers for Pt/Bi(3.25)La(0.75)Ti3O12/ZrO2/Si (MFIS)-FET Structures
J Korean Inst Electr Electron Mater Eng 2005;18(5):439-444.   Published online May 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.5.439
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Characteristics of Mo Gate Electrode Deposited on ZrO2 Gate Insulator
J Korean Inst Electr Electron Mater Eng 2005;18(2):120-124.   Published online February 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.2.120
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