Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

반도체 / 13-2-3 : 고 에너지 이온 주입된 CMOS 쌍 우물 구조의 레치업 면역성 예측을 위한 TCAD 모의실험 연구

송한정, 김종민, 곽계달

A Study on the TCAD Simulation to Predict the Latchup Immunity of High Energy Ion Implanted CMOS Twin Well Structures

Han Jung Song, Jong Min Kim, Kae Dal Kwack
J Electr Electron Mater 2000;13(2):106-113.
Published online: February 1, 2000
  • 4 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

A Study on the TCAD Simulation to Predict the Latchup Immunity of High Energy Ion Implanted CMOS Twin Well Structures
J Electr Electron Mater. 2000;13(2):106-113.   Published online February 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
A Study on the TCAD Simulation to Predict the Latchup Immunity of High Energy Ion Implanted CMOS Twin Well Structures
J Electr Electron Mater. 2000;13(2):106-113.   Published online February 1, 2000
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.