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반도체 / 13-2-6 / 자연 산화물 분산 촉진에 의한 실 시간 인 도핑 실리콘의 고품질 에피택셜 저온 성장

김홍승, 심규환, 이승윤, 이정용, 강진영

High - Quality Epitaxial Low Temperature Growth of In Situ Phosphorus - Doped Si Films by Promoting Dispersion of Native Oxides

Hong Seung Kim, Kyu Hwan Shim, Seung Yun Lee, Jeong Yong Lee, Jin Young Kang
J Electr Electron Mater 2000;13(2):125-130.
Published online: February 1, 2000
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High - Quality Epitaxial Low Temperature Growth of In Situ Phosphorus - Doped Si Films by Promoting Dispersion of Native Oxides
J Electr Electron Mater. 2000;13(2):125-130.   Published online February 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Include:
High - Quality Epitaxial Low Temperature Growth of In Situ Phosphorus - Doped Si Films by Promoting Dispersion of Native Oxides
J Electr Electron Mater. 2000;13(2):125-130.   Published online February 1, 2000
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