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Si-Ge-H-Cl 계를 이용한 자기정렬 HBT용 Si 및 SiGe의 선택적 에피성장

김상훈, 박찬우, 이승윤, 심규환, 강진영

Selective Epitaxial Growth of Si and SiGe using Si-Ge-H-Cl System for Self-Aligned HBT Applications

Sang Hoon Kim, Chan Woo Park, Seung Yun Lee, Kyu Hwan Shim, Jin Young Kang
J Electr Electron Mater 2003;16(7):573-578.
Published online: July 1, 2003
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Selective Epitaxial Growth of Si and SiGe using Si-Ge-H-Cl System for Self-Aligned HBT Applications
J Electr Electron Mater. 2003;16(7):573-578.   Published online July 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Selective Epitaxial Growth of Si and SiGe using Si-Ge-H-Cl System for Self-Aligned HBT Applications
J Electr Electron Mater. 2003;16(7):573-578.   Published online July 1, 2003
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