Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

증착과 식각의 연속 공정을 이용한 저온 선택적 실리콘-게르마늄 에피 성장

김상훈, 이승윤, 박찬우, 심규환, 강진영

Low-Temperature Selective Epitaxial Growth of SiGe using a Cyclic Process of Deposition-and-Etching

Sang Hun Kim, Seung Yun Lee, Chan U Park, Gyu Hwan Sim, Jin Yeong Kang
J Electr Electron Mater 2003;16(8):657-662.
Published online: August 1, 2003
  • 6 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Low-Temperature Selective Epitaxial Growth of SiGe using a Cyclic Process of Deposition-and-Etching
J Electr Electron Mater. 2003;16(8):657-662.   Published online August 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Low-Temperature Selective Epitaxial Growth of SiGe using a Cyclic Process of Deposition-and-Etching
J Electr Electron Mater. 2003;16(8):657-662.   Published online August 1, 2003
Close