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저온 래디컬 산화법에 의한 고품질 초박막 게이트 산화막의 성장과 이를 이용한 고성능 실리콘-게르마늄 이종구조 CMOS의 제작

송영주, 김상훈, 이내응, 강진영, 심규환

High Quality Ultrathin Gate Oxides Grown by Low-Temperature Radical Induced Oxidation for High Performance SiGe Heterostructure CMOS Applications

Yeong Ju Song, Sang Hun Kim, Nae Eung Lee, Jin Yeong Kang, Gyu Hwan Sim
J Electr Electron Mater 2003;16(9):765-770.
Published online: September 1, 2003
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High Quality Ultrathin Gate Oxides Grown by Low-Temperature Radical Induced Oxidation for High Performance SiGe Heterostructure CMOS Applications
J Electr Electron Mater. 2003;16(9):765-770.   Published online September 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
High Quality Ultrathin Gate Oxides Grown by Low-Temperature Radical Induced Oxidation for High Performance SiGe Heterostructure CMOS Applications
J Electr Electron Mater. 2003;16(9):765-770.   Published online September 1, 2003
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