Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry

U Seon Lee; Gwon U Choe; Yeong Sig Lee; Yeon Og Choe; Yong Taeg O; Yong Jin Seo

doi:10.4313/JKEM.2004.17.2.156

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텅스텐 슬러리를 사용한 Cu-CMP 특성에서 산화제 첨가의 영향

이우선, 최권우, 이영식, 최연옥, 오용택, 서용진

Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry

U Seon Lee, Gwon U Choe, Yeong Sig Lee, Yeon Og Choe, Yong Taeg O, Yong Jin Seo

J Korean Inst Electr Electron Mater Eng 2004;17(2):156-161.
Published online: February 1, 2004

DOI: https://doi.org/10.4313/JKEM.2004.17.2.156

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Keywords: Chemical mechanical polishing, CMP, Tungsten slurry, Removal rate, Non-uniformity, SEM

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Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry

J Korean Inst Electr Electron Mater Eng. 2004;17(2):156-161. Published online February 1, 2004

DOI: https://doi.org/10.4313/JKEM.2004.17.2.156

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry

J Korean Inst Electr Electron Mater Eng. 2004;17(2):156-161. Published online February 1, 2004

DOI: https://doi.org/10.4313/JKEM.2004.17.2.156

Articles

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텅스텐 슬러리를 사용한 Cu-CMP 특성에서 산화제 첨가의 영향

Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry

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