Studies for Improvement in SiO2, Film Property for Thin Film Transistor

Chang Ki Seo; Myung Suk Shim; Jun Sin Yi

doi:10.4313/JKEM.2004.17.6.580

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박막트랜지스터 응용을 위한 SiO2 박막 특성 연구

서창기, 심명석, 이준신

Studies for Improvement in SiO2, Film Property for Thin Film Transistor

Chang Ki Seo, Myung Suk Shim, Jun Sin Yi

J Korean Inst Electr Electron Mater Eng 2004;17(6):580-585.
Published online: June 1, 2004

DOI: https://doi.org/10.4313/JKEM.2004.17.6.580

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Keywords: Silicon oxide, APCVD, TEOS, Tetraethylorthosilicate, Forming Gas Annealing

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Studies for Improvement in SiO2, Film Property for Thin Film Transistor

J Korean Inst Electr Electron Mater Eng. 2004;17(6):580-585. Published online June 1, 2004

DOI: https://doi.org/10.4313/JKEM.2004.17.6.580

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Studies for Improvement in SiO2, Film Property for Thin Film Transistor

J Korean Inst Electr Electron Mater Eng. 2004;17(6):580-585. Published online June 1, 2004

DOI: https://doi.org/10.4313/JKEM.2004.17.6.580

Articles

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박막트랜지스터 응용을 위한 SiO2 박막 특성 연구

Studies for Improvement in SiO2, Film Property for Thin Film Transistor

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