Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

범용성 유도결합 플라즈마 식각장비를 이용한 깊은 실리콘 식각

조수범, 박세근, 오범환

The Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher

Soo Beom Jo, Se Geun Park, Beom Hoan O
J Korean Inst Electr Electron Mater Eng 2004;17(7):701-707.
Published online: July 1, 2004
  • 28 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

The Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher
J Korean Inst Electr Electron Mater Eng. 2004;17(7):701-707.   Published online July 1, 2004
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
The Development of Deep Silicon Etch Process with Conventional Inductively Coupled Plasma (ICP) Etcher
J Korean Inst Electr Electron Mater Eng. 2004;17(7):701-707.   Published online July 1, 2004
Close