Shallow p+-n Junction Formation and the Design of Boron Diffusion Simulator

Jae Young Kim; Chung Keun Lee; Bo Ra Kim; Shin Nam Hong

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박막 p(+)-n 적합 형성과 보론 확산 시뮬레이터 설계

김재영, 이충근, 김보라, 홍신남

Shallow p+-n Junction Formation and the Design of Boron Diffusion Simulator

Jae Young Kim, Chung Keun Lee, Bo Ra Kim, Shin Nam Hong

J Electr Electron Mater 2004;17(7):708-712.
Published online: July 1, 2004

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Keywords: Diffusion, Diffusion model, RTA, Boron, Dual-annealing

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Shallow p+-n Junction Formation and the Design of Boron Diffusion Simulator

J Electr Electron Mater. 2004;17(7):708-712. Published online July 1, 2004

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Shallow p+-n Junction Formation and the Design of Boron Diffusion Simulator

J Electr Electron Mater. 2004;17(7):708-712. Published online July 1, 2004

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박막 p(+)-n 적합 형성과 보론 확산 시뮬레이터 설계

Shallow p+-n Junction Formation and the Design of Boron Diffusion Simulator

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