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대기압 MOCVD 시스템을 이용하여 Si 기판 위에 자발적으로 형성된 InAs 양자점에 대한 연구

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Epitaxy of Self-assembled inAs Quantum Dots on Si Substrates by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

J Electr Electron Mater 2005;18(6):527-531.
Published online: June 1, 2005
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Epitaxy of Self-assembled inAs Quantum Dots on Si Substrates by Atmospheric Pressure Metalorganic Chemical Vapor Deposition
J Electr Electron Mater. 2005;18(6):527-531.   Published online June 1, 2005
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Epitaxy of Self-assembled inAs Quantum Dots on Si Substrates by Atmospheric Pressure Metalorganic Chemical Vapor Deposition
J Electr Electron Mater. 2005;18(6):527-531.   Published online June 1, 2005
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