Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films

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비정질 Ge1Se1Te2과 Ge2Sb2Te5 칼코게나이드 박막의 상변화특성

정홍배, 조원주, 구상모

Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films

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J Electr Electron Mater 2006;19(10):918-922.
Published online: October 1, 2006

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Keywords: Phase chnge memory device, Nonvolatile memory, Chalcogenide, Ge1Se1Te2, Ge2Sb2Te5

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Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films

J Electr Electron Mater. 2006;19(10):918-922. Published online October 1, 2006

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Citation for the content below
Citation and abstract for the content below

Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films

J Electr Electron Mater. 2006;19(10):918-922. Published online October 1, 2006

Articles

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비정질 Ge1Se1Te2과 Ge2Sb2Te5 칼코게나이드 박막의 상변화특성

Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films

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