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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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트랜치 에미터 전극을 이용한 수직형 NPT 트랜치 게이트 IGBT의 전기적 특성 향상 연구

이종석, 강이구, 성만영

Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode

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J Electr Electron Mater 2006;19(10):912-917.
Published online: October 1, 2006
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Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode
J Electr Electron Mater. 2006;19(10):912-917.   Published online October 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode
J Electr Electron Mater. 2006;19(10):912-917.   Published online October 1, 2006
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