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Nano-CMOSFET를 위한 플라즈마-질화막의 초기 산화막 성장방법에 따른 소자 특성과 저주파 잡음 특성 분석

주한수, 한인식, 구태규, 유욱상, 최원호, 최명규, 이가원, 이희덕

Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET

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J Electr Electron Mater 2007;20(1):1-7.
Published online: January 1, 2007
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Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET
J Electr Electron Mater. 2007;20(1):1-7.   Published online January 1, 2007
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET
J Electr Electron Mater. 2007;20(1):1-7.   Published online January 1, 2007
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