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EEPROM 셀에서 폴리실리콘 플로팅 게이트의 도핑 농도가 프로그래밍 문턱전압에 미치는 영향

장성근, 김윤장

Effects of Doping Concentration in Polysilicon Floating Gate on Programming Threshold Voltage of EEPROM Cell

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J Electr Electron Mater 2007;20(2):113-117.
Published online: February 1, 2007
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Effects of Doping Concentration in Polysilicon Floating Gate on Programming Threshold Voltage of EEPROM Cell
J Electr Electron Mater. 2007;20(2):113-117.   Published online February 1, 2007
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Effects of Doping Concentration in Polysilicon Floating Gate on Programming Threshold Voltage of EEPROM Cell
J Electr Electron Mater. 2007;20(2):113-117.   Published online February 1, 2007
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