Ferroelectric Properties of Bi(3.25)La(0.75)Ti3O(12) Thin Films with Eu Contents for Non-volatile Memory Device Application

doi:10.4313/JKEM.2007.20.3.223

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비휘발성 메모리 소자응용을 위한 Eu 첨가량에 따른 BET 박막의 강유전 특성

김경태, 김종규, 우종창, 김관하, 김창일

Ferroelectric Properties of Bi(3.25)La(0.75)Ti3O(12) Thin Films with Eu Contents for Non-volatile Memory Device Application

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J Korean Inst Electr Electron Mater Eng 2007;20(3):223-227.
Published online: March 1, 2007

DOI: https://doi.org/10.4313/JKEM.2007.20.3.223

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Keywords: BET, FRAM, Thin film, Ferroelectric, MOD

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Ferroelectric Properties of Bi(3.25)La(0.75)Ti3O(12) Thin Films with Eu Contents for Non-volatile Memory Device Application

J Korean Inst Electr Electron Mater Eng. 2007;20(3):223-227. Published online March 1, 2007

DOI: https://doi.org/10.4313/JKEM.2007.20.3.223

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Ferroelectric Properties of Bi(3.25)La(0.75)Ti3O(12) Thin Films with Eu Contents for Non-volatile Memory Device Application

J Korean Inst Electr Electron Mater Eng. 2007;20(3):223-227. Published online March 1, 2007

DOI: https://doi.org/10.4313/JKEM.2007.20.3.223

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비휘발성 메모리 소자응용을 위한 Eu 첨가량에 따른 BET 박막의 강유전 특성

Ferroelectric Properties of Bi(3.25)La(0.75)Ti3O(12) Thin Films with Eu Contents for Non-volatile Memory Device Application

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