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나노급 CMOSFET을 위한 Boron Cluster(B18H22)가 이온 주입된(SOI 및 Bulk)기판에 Ni-V합금을 이용한 Ni-silicide의 열안정성 개선

이세광, 이원재, 장잉잉, 종준, 정순연, 이가원, 왕진석, 이희덕

Improving the Thermal Stability of Ni-silicide using Ni-V on Boron Cluster Implanted Source/drain for Nano-scale CMOSFETs

, , , , , , ,
J Electr Electron Mater 2007;20(6):487-490.
Published online: June 1, 2007
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Improving the Thermal Stability of Ni-silicide using Ni-V on Boron Cluster Implanted Source/drain for Nano-scale CMOSFETs
J Electr Electron Mater. 2007;20(6):487-490.   Published online June 1, 2007
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Improving the Thermal Stability of Ni-silicide using Ni-V on Boron Cluster Implanted Source/drain for Nano-scale CMOSFETs
J Electr Electron Mater. 2007;20(6):487-490.   Published online June 1, 2007
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